VN10LF Diodes Inc, VN10LF Datasheet
VN10LF
Manufacturer Part Number
VN10LF
Description
N CHANNEL MOSFET, 60V, 150mA SOT-23
Manufacturer
Diodes Inc
Datasheet
1.VN10LFTA.pdf
(1 pages)
Specifications of VN10LF
Transistor Polarity
N Channel
Continuous Drain Current Id
150mA
Drain Source Voltage Vds
60V
On Resistance Rds(on)
5ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
2.5V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
VN10LF-7
Manufacturer:
DIODES/美台
Quantity:
20 000
Company:
Part Number:
VN10LFTA
Manufacturer:
NOVATEK
Quantity:
12 000
Part Number:
VN10LFTA
Manufacturer:
ZETEX
Quantity:
20 000
SOT23 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – JANUARY 1996
FEATURES
*
*
PARTMARKING DETAIL –
ABSOLUTE MAXIMUM RATINGS.
ELECTRICAL CHARACTERISTICS (at T
(1) Measured under pulsed conditions. Width=300 s. Duty cycle 2% (2) Sample test.
(3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device
For typical characteristics graphs see ZVN3306F datasheet.
PARAMETER
Drain-Source Voltage
PARAMETER
Drain-Source
Breakdown Voltage
Gate Body Leakage
Continuous Drain Current at T
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at T
Operating and Storage Temperature Range
Gate-Source
Breakdown Voltage
Zero Gate Voltage
Drain Current (1)
On State Drain
Current(1)
Static Drain Source On
State Resistance (1)
Forward
Transconductance
(1)(2)
Input Capacitance (2)
Common Source
Output Capacitance (2)
Reverse Transfer
Capacitance (2)
Turn-On Time (2)(3)
Turn-Off Time (2)(3)
60 Volt V
R
DS(on)
=5
DS
amb
SYMBOL
BV
V
I
I
I
R
g
C
C
C
t
t
GSS
DSS
D(on)
(on)
(off)
= 25°C
fs
GS(th)
DS(on)
iss
oss
rss
DSS
MY
amb
= 25°C
MIN.
60
0.8
750
100
3 - 308
amb
TYP.
3
4
V
SYMBOL
V
I
I
P
T
D
DM
tot
j
DS
GS
= 25°C unless otherwise stated).
:T
stg
MAX.
2.5
100
10
5.0
7.5
60
25
5
10
10
UNIT
V
V
nA
mA
mS
pF
pF
pF
ns
ns
A
-55 to +150
VALUE
150
330
CONDITIONS.
I
I
V
V
V
V
V
V
V
f=1MHz
V
60
D
D
3
20
GS
DS
DS
GS
GS
DS
DS
DD
=100 A, V
=1mA, V
D
VN10LF
=60 V, V
=15 V, V
=15V, I
=25 V, V
= 20V, V
=10V, I
=5V, I
15V, I
D
=200mA
DS
D
D
D
=500mA
=500mA
GS
GS
GS
=600mA
GS
= V
DS
=0V
=10V
=0V
=0V
UNIT
=0V
mW
mA
GS
°C
V
A
V
G
S
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