ZHCS750 Diodes Inc, ZHCS750 Datasheet
ZHCS750
Manufacturer Part Number
ZHCS750
Description
DIODE, SCHOTTKY, SOT-23
Manufacturer
Diodes Inc
Datasheet
1.ZHCS750.pdf
(3 pages)
Specifications of ZHCS750
Repetitive Reverse Voltage Vrrm Max
30V
Forward Current If(av)
750mA
Forward Voltage Vf Max
490mV
Reverse Recovery Time Trr Max
12ns
Forward Surge Current Ifsm Max
12A
Diode Case
RoHS Compliant
Diode Type
Schottky
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
ZHCS750TA
Manufacturer:
ZETEX
Quantity:
3 000
Company:
Part Number:
ZHCS750TA
Manufacturer:
TI
Quantity:
3 000
Part Number:
ZHCS750TA
Manufacturer:
ZETEX/美台
Quantity:
20 000
SOT23 SILICON HIGH CURRENT
SCHOTTKY BARRIER DIODE “SuperBAT”
ISSUE 2 - October 1997
FEATURES:
*
*
APPLICATIONS:
*
*
*
PARTMARK DETAIL: ZS7
ABSOLUTE MAXIMUM RATINGS.
ELECTRICAL CHARACTERISTICS (at T
*Measured under pulsed conditions. Pulse width= 300 s; duty cycle 2% .
PARAMETER
Continuous Reverse Voltage
Forward Current (Continuous)
Forward Voltage @ I
Average Peak Forward Current; D.C. = 50%
Non Repetitive Forward Current t 100 s
Power Dissipation at T
Storage Temperature Range
Junction Temperature
PARAMETER
Reverse Breakdown
Voltage
Forward Voltage
Reverse Current
Diode Capacitance
Reverse Recovery
Time
Low V
High Current Capability
DC - DC converters
Mobile telecomms
PCMCIA
F
F
= 750mA
amb
SYMBOL
V
V
I
C
t
R
rr
D
(BR)R
F
= 25° C
t 10ms
MIN.
40
TYP.
60
225
235
290
340
390
440
530
50
25
12
amb
SYMBOL
I
V
I
I
P
T
T
V
F
FAV
FSM
tot
stg
j
R
F
= 25° C unless otherwise stated).
MAX.
280
310
350
420
490
540
650
100
UNIT
V
mV
mV
mV
mV
mV
mV
mV
pF
ns
A
1
3
-55 to + 150
CONDITIONS.
I
I
I
I
I
I
I
I
V
f= 1MHz,V
switched from
I
Measured at I
R
F
F
F
F
F
F
F
F
VALUE
= 50mA*
= 100mA*
= 250mA*
= 500mA*
= 750mA*
= 1000mA*
= 1500mA*
= 300 A
R
= 500mA to I
1500
= 30V
750
490
500
125
5.2
40
12
C
1
ZHCS750
R
= 25V
SOT23
R
= 50mA
R
= 500mA
UNIT
mW
mA
mV
mA
° C
° C
V
A
A
A
3
2
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ZHCS750 Summary of contents
Page 1
... C unless otherwise stated). amb MIN. TYP. MAX. UNIT 225 280 mV 235 310 mV 290 350 mV 340 420 mV 390 490 mV 440 540 mV 530 650 mV 50 100 ZHCS750 SOT23 VALUE UNIT 40 V 750 mA 490 mV 1500 5.2 A 500 mW - 150 ° C 125 ° C CONDITIONS 300 50mA ...
Page 2
... ZHCS750 TYPICAL CHARACTERISTICS 10 1 0.1 +125°C +25°C 0.01 0 0.2 0 Forward Voltage ( 1.2 Typical DC 0.8 D=0.5 D=0.2 0.4 D=0.1 D=0. Case Temperature (° F(av) 125 100 Reverse Voltage ( 100m 10m 1m 100µ 10µ -55°C 100n 10n 0.6 0.8 F 0.5 D F(pk) 0.4 ...
Page 3
... MAXIMUM TRANSIENT THERMAL RESISTANCE * Reference above figure, devices were mounted on a 15mmx15mm ceramic substrate. TYPICAL CHARACTERISTICS ZHCS750 ...