ZXGD3101 Diodes, Inc., ZXGD3101 Datasheet

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ZXGD3101

Manufacturer Part Number
ZXGD3101
Description
Synchronous Rectifier Controller For Flyback Converters.
Manufacturer
Diodes, Inc.
Datasheet

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ZXGD3101N8TC
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ZXGD3101T8TA
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ZXGD3101T8
Synchronous rectifier controller for flyback converters.
Description
The ZXGD3101 is intended to drive MOSFETS
configured as ideal diode replacements. The
device is comprised of a differential amplifier
detector stage and high current driver. The
detector monitors the reverse voltage of the
MOSFET such that if body diode conduction
occurs a positive voltage is applied to the
MOSFET's Gate pin.
Features
Pin out detail
Ordering information
Issue 4 - January 2009
© Diodes Incorporated 2009
ZXGD3101T8TA
Turn-off propagation delay 15ns and turn-
off time 20ns
Suitable for Discontinuous Mode (DCM),
Critical Conduction Mode (CrCM) and
Continuous
operation
Compliant with Energy Star V2.0 and
European Code of Conduct V3
Low component count
Halogen free
5-15V V
GATEH
GATEL
Device
REF
N/C
CC
range
conduction
1
2
3
4
SM8
Status
Active
8
7
6
5
mode
DRAIN
BIAS
GND
V
Package
CC
SM8
(CCM)
ZXGD3101
Part Mark
1
Once the positive voltage is applied to the Gate
the MOSFET switches on allowing reverse
current flow. The detectors' output voltage is
then proportional to the MOSFET Drain-Source
reverse voltage drop and this is applied to the
Gate via the driver. This action provides a rapid
turn off as current decays.
Applications
Flyback converters in:
Refer to documents; AN54, DN90, DN91 and
DN94 available from the website
Typical configuration
Adaptors
LCD monitors
Server PSU’s
Set top boxes
Diodes Incorporated
Reel size
(inches)
A Product Line of
7
Transformer
Tape width
(mm)
R
12
R E F
S yn ch ro n o u s R e ctifie r
D R AIN
GAT EL
R EF
M O S FE T
BIAS
GAT EH GN D
www.diodes.com
ZX G D
3 1 0 1
www.zetex.com
R
B IA S
Quantity
per reel
Vcc
1000
C1

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ZXGD3101 Summary of contents

Page 1

... ZXGD3101T8 Synchronous rectifier controller for flyback converters. Description The ZXGD3101 is intended to drive MOSFETS configured as ideal diode replacements. The device is comprised of a differential amplifier detector stage and high current driver. The detector monitors the reverse voltage of the MOSFET such that if body diode conduction occurs a positive voltage is applied to the MOSFET's Gate pin ...

Page 2

... Symbol SOURCE I SINK I REF V BIAS I BIAS stg Symbol R θJA R θIA 2 ZXGD3101T8 Limit Unit to180 100 mA 500 mW °C -40 to +150 °C -50 to +150 Value Unit 250 °C/W 54 ° ...

Page 3

... DRAIN V = -60mV, DRAIN V = -80mV, DRAIN -100mV, G DRAIN ≤ -140mV, V DRAIN ≤ -200mV, V DRAIN SOURCE SINK (a) († 2.2nF ZXGD3101T8 Min. Typ. Max -45 - 0.6 1 (†) 5.0 7.5 - (†) 7.0 8.5 - (†) 8 (†) 9.2 9.4 - (†) 9.3 9.5 - 2.5 - 2.5 - 525 15 305 20 www ...

Page 4

... via resistor from the synchronous MOSFET Gate. SINK , to the synchronous MOSFET Gate. SOURCE via resistor into this pin. See note 1 REF 4 ZXGD3101T8 Vcc river should be selected to source REF REF . R should be selected to ...

Page 5

... At zero current the detector output voltage is zero and the synchronous MOSFET Gate voltage is pulled low by the GATEL, turning the device off. M OSF ET D rain Voltage M OSF ET Gate Voltage M OSF ET Gate C urrent Issue 4 - January 2009 © Diodes Incorporated 2009 Body D iode 2 C onduction D rain 1 current zero ZXGD3101T8 www.zetex.com www.diodes.com ...

Page 6

... Fig 1a: Continuous Conduction Mode (CCM) Fig 1b: Critical Conduction Mode (CrCM) Fig 1c: Discontinuous Conduction Mode (DCM) Issue 4 - January 2009 © Diodes Incorporated 2009 Figure 1. Typical waveforms 6 ZXGD3101T8 www.zetex.com www.diodes.com ...

Page 7

... Typical characteristics Turn-off offset voltage Issue 4 - January 2009 © Diodes Incorporated 2009 ZXGD3101T8 Turn-off offset voltage 7 www.zetex.com www.diodes.com ...

Page 8

... Typical characteristics Turn-off offset voltage Issue 4 - January 2009 © Diodes Incorporated 2009 ZXGD3101T8 8 www.zetex.com www.diodes.com ...

Page 9

... Typical characteristics Component selection It is advisable to decouple the ZXGD3101 closely to V peak gate currents with C1 in Figure 2. The proper selection of external resistors R operation. Select a value for resistor R R must then be 0.6 times the value of R BIAS provides a recommended typical offset voltage of -20mV. ...

Page 10

... syn S D Vcc BIAS Vcc AIN GAT EL GAT Qpri 10 ZXGD3101T8 Vcc syn C snub + Out ...

Page 11

... DRAIN H 3101 GATEL GATEH GND R L Figure 4: Test circuit Body Diode Conduction Zero voltage transition NOTE: GATE H AND GATE L ARE CONNECTED Figure 5: Timing diagram 11 ZXGD3101T8 Vcc C1 1μF X7R 2200pF X7 R GND 20mV - www.zetex.com www.diodes.com ...

Page 12

... Issue 4 - January 2009 © Diodes Incorporated 2009 Inches DIM Min. Max. Typ. - 0.067 - e1 0.0008 0.004 - 0.0275 He 0.009 0.013 - Lp 0.248 0.264 - 0.130 0.145 - 12 ZXGD3101T8 Millimeters Inches Min. Max. Typ. Min. Max 4. 1.53 - 6.7 7.3 - 0.264 0.287 0 0.035 - 15° 10° - www.zetex.com www.diodes.com Typ. ...

Page 13

... Issue 4 - January 2009 © Diodes Incorporated 2009 Intentionally left blank 13 ZXGD3101T8 www.zetex.com www.diodes.com ...

Page 14

... Changning Road Hsin-Tien Shanghai, China Taipei, Taiwan Tel: (+86) 215 241 4882 Tel: (+886) 289 146 000 Fax (+86) 215 241 4891 Fax: (+886) 289 146 639 14 ZXGD3101T8 Shenzhen Korea ANLIAN Plaza, #4018 6 Floor, Changhwa B/D, Jintian Road 1005-5 Yeongtong-dong, Futian CBD, Yeongtong-gu, Suwon-si, ...

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