NUP1301ML3T1G ON Semiconductor, NUP1301ML3T1G Datasheet

NUP1301ML3T1G

Manufacturer Part Number

NUP1301ML3T1G

Description

IC DIODE ARRAY LOCAP ESD SOT-23

Manufacturer

ON Semiconductor

Datasheet

1.NUP1301ML3T1G.pdf (4 pages)

Specifications of NUP1301ML3T1G

Voltage - Reverse Standoff (typ)

70V

Voltage - Breakdown

70V

Polarization

2 Channel Array - Unidirectional

Mounting Type

Surface Mount

Package / Case

SOT-23-3, TO-236-3, Micro3™, SSD3, SST3

Product

Standard Recovery Rectifier

Configuration

Dual Series

Reverse Voltage

70 V

Forward Voltage Drop

1.25 V @ 0.15 A

Forward Continuous Current

0.715 A

Max Surge Current

0.45 A

Reverse Current Ir

2.5 uA

Mounting Style

SMD/SMT

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Power (watts)

Lead Free Status / Rohs Status

Lead free / RoHS Compliant

Other names

NUP1301ML3T1G
NUP1301ML3T1GOSTR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NUP1301ML3T1G

Manufacturer:

Quantity:

6 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NUP1301ML3T1G

Manufacturer:

Quantity:

30 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

NUP1301ML3T1G

Manufacturer:

ON/安森美

Quantity:

20 000

Current page: 1 of 4
Download datasheet (33Kb)

NUP1301ML3T1

Low Capacitance Diode

Array for ESD Protection in

a Single Data Line

provide protection for sensitive components from possible harmful

electrical transients; for example, ESD (electrostatic discharge).

Features

Applications

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. FR−5 = 1.0 0.75 0.062 in.

MAXIMUM RATINGS

January, 2005 − Rev. 4

Reverse Voltage

Forward Current

Peak Forward Surge Current

Repetitive Peak Reverse Voltage

Average Rectified Forward

Repetitive Peak Forward Current

Non−Repetitive Peak Forward Current

NUP1301ML3T1 is a MicroIntegration

Low Capacitance (0.9 pF Maximum)

Single Package Integration Design

Provides ESD Protection for JEDEC Standards JESD22

Protection for IEC61000−4−2 (Level 4)

Ensures Data Line Speed and Integrity

Fewer Components and Less Board Space

Direct the Transient to Either Positive Side or to the Ground

Pb−Free Package is Available

T1/E1 Secondary IC Protection

T3/E3 Secondary IC Protection

HDSL, IDSL Secondary IC Protection

Video Line Protection

Microcontroller Input Protection

Base Stations

Semiconductor Components Industries, LLC, 2005

Current (Note 1)

(averaged over any 20 ms period)

t = 1.0 ms

t = 1.0 S

C Bus Protection

Machine Model = Class C

Human Body Model = Class 3B

8.0 kV (Contact)

15 kV (Air)

Rating

(Each Diode) (T

= 25 C unless otherwise noted)

Symbol

FM(surge)

F(AV)

FRM

FSM

RRM

device designed to

Value

215

500

715

450

2.0

1.0

0.5

mAdc

Unit

Vdc

†For information on tape and reel specifications,

NUP1301ML3T1

NUP1301ML3T1G

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Device

ANODE

ORDERING INFORMATION

MARKING DIAGRAM

53 = Device Code

M = Date Code

http://onsemi.com

CATHODE/ANODE

(Pb−Free)

CASE 318

STYLE 11

Package

SOT−23

53 M

Publication Order Number:

3000 / Tape & Reel

NUP1301ML3T1/D

CATHODE

Shipping

†

Related parts for NUP1301ML3T1G

NUP1301ML3T1G Summary of contents

Page 1

... ORDERING INFORMATION Device Package Shipping NUP1301ML3T1 SOT−23 3000 / Tape & Reel NUP1301ML3T1G SOT−23 3000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. ...

Page 2

THERMAL CHARACTERISTICS Characteristic Thermal Resistance Junction−to−Ambient Lead Solder Temperature Maximum 10 Seconds Duration Junction Temperature Storage Temperature ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS = 100 mA) Reverse Breakdown Voltage (I (BR) Reverse Voltage Leakage Current Diode Capacitance (between I/O and ground) ...

Page 3

ESD Input Signal Electrostatic Discharge A common means of protecting high−speed data lines is to employ low−capacitance diode arrays in a rail−to−rail configuration. Two devices per line are connected between two fixed voltage references such the transient ...

Page 4

... *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. MicroIntegration is a trademark of Semiconductor Components Industries, LLC (SCILLC). ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

Related keywords

nup1301
nup1301ml3t1g
nup1301ml3t1
NUP1301ML3T1G datasheet
NUP1301ML3T1G data sheet
NUP1301ML3T1G pdf datasheet
NUP1301ML3T1G component
NUP1301ML3T1G part
NUP1301ML3T1G distributor
NUP1301ML3T1G RoHS
NUP1301ML3T1G datasheet download