SMBJ6.5A-TR STMicroelectronics, SMBJ6.5A-TR Datasheet - Page 5
![TVS 600W 6.5V UNI-DIR DO-214AA](/photos/5/36/53650/497-do-214aa_sml.jpg)
SMBJ6.5A-TR
Manufacturer Part Number
SMBJ6.5A-TR
Description
TVS 600W 6.5V UNI-DIR DO-214AA
Manufacturer
STMicroelectronics
Series
TRANSIL™r
Datasheet
1.SMBJ13A-TR.pdf
(10 pages)
Specifications of SMBJ6.5A-TR
Voltage - Reverse Standoff (typ)
6.5V
Voltage - Breakdown
7.2V
Power (watts)
600W
Polarization
Unidirectional
Mounting Type
Surface Mount
Package / Case
DO-214AA, SMB
Number Of Elements
1
Polarity
Uni-Directional
Package Type
SMB
Operating Temperature Classification
Military
Reverse Breakdown Voltage
7.2V
Clamping Voltage
14.5V
Reverse Stand-off Voltage
6.5V
Leakage Current (max)
20uA
Peak Pulse Current
276A
Peak Pulse Power Dissipation
600W
Test Current (it)
10mA
Operating Temp Range
-55C to 150C
Mounting
Surface Mount
Pin Count
2
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-3007-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SMBJ6.5A-TR
Manufacturer:
STMicroe
Quantity:
88 000
Part Number:
SMBJ6.5A-TR
Manufacturer:
ST
Quantity:
20 000
SMBJ
Figure 6.
Figure 8.
Figure 10. Thermal resistance, junction to
1.0E+02
1.0E+01
1.0E+00
10000
110
100
1.0E-01
1.0E-02
1000
90
80
70
60
50
40
30
20
10
100
0
10
0.0
R
1
th(J-A)
0.0
(°C/W)
0.5
Junction capacitance versus
reverse applied voltage for
unidirectional types (typical values)
Peak forward voltage drop
versus peak forward current
(typical values)
ambient, versus copper surface
under each lead
1.0
T
0.5
j
=125 °C
1.5
SMBJ5.0A
10
1.0
V
R
2.0
(V)
T
SMBJ12A
j
SCU (cm²)
=25 °C
2.5
1.5
PCB FR4, copper thickness = 35 µm
SMBJ24A
3.0
SMBJ40A
100
2.0
3.5
SMBJ85A
V
FM
(V)
4.0
V
osc
SMBJ188A
F=1 MHz
T
2.5
=30 mV
j
=25 °C
Doc ID 5616 Rev 10
4.5
RMS
1000
3.0
5.0
Figure 7.
Figure 9.
Figure 11. Leakage current versus junction
1.00
0.10
0.01
10000
1.E+03
1.E+02
1.E+01
1.E+00
1.E-01
1000
1.0E-03
100
10
1
25
Recommended pad layout
PCB FR4, copper thickness = 35 µm
V
V
RM
1.0E-02
R
=V
< 10 V
RM
Junction capacitance versus
reverse applied voltage for
bidirectional types (typical values)
Relative variation of thermal
impedance, junction to ambient,
versus pulse duration
temperature (typical values)
50
1.0E-01
SMBJ5.0CA
10
V
V
RM
R
=V
10 V
75
RM
SMBJ12CA
1.0E+00
V
R
(V)
SMBJ24CA
SMBJ40CA
1.0E+01
100
100
SMBJ85CA
Characteristics
1.0E+02
V
125
SMBJ188CA
osc
F=1 MHz
T
T
=30 mV
j
=25 °C
j
(°C)
t
P
RMS
1.0E+03
(s)
1000
150
5/10