NUP1105LT1G ON Semiconductor, NUP1105LT1G Datasheet - Page 3

• Manufacturer Part Number: NUP1105LT1G
• Description: IC BUS PROTECTOR CAN/LIN SOT-23
• Manufacturer: ON Semiconductor

Specifications of NUP1105LT1G

• Voltage - Reverse Standoff (typ): 24V
• Voltage - Breakdown: 25.7V
• Power (watts): 350W
• Polarization: Bidirectional
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Polarity: Bidirectional
• Channels: 1 Channel
• Clamping Voltage: 44 V
• Operating Voltage: 24 V (Min)
• Breakdown Voltage: 25.7 V
• Termination Style: SMD/SMT
• Peak Surge Current: 8 A
• Peak Pulse Power Dissipation: 350 W
• Capacitance: 60 pF
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Dimensions: 1.3 mm W x 2.9 mm L
• Reverse Stand-off Voltage Vrwm: 24V
• Breakdown Voltage Range: 25.7V To 28.4V
• Clamping Voltage Vc Max: 40V
• Peak Pulse Current Ippm: 8A
• Diode Case Style: SOT-23
• No. Of Pins: 3
• Termination Type: SMD
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NUP1105LT1G; NUP1105LT1GOSTR

100
110
90
80
70
60
50
40
30
20
10
45
40
35
30
25
20
15
10
0
5
0
−60
0
Figure 3. Typical Leakage vs. Temperature
Figure 1. Pulse Waveform, 8 × 20 ms
5
−10
10
TEMPERATURE (°C)
c−t
40
t, TIME (ms)
t
d
15
= I
60
50
40
30
20
10
0
PP
0
90
/2
20
25°C
TYPICAL PERFORMANCE CURVES
WAVEFORM
PARAMETERS
t
t
r
d
= 8 ms
= 20 ms
Figure 5. Capacitance vs. V
(T
140
5
J
25
= 25°C unless otherwise noted)
http://onsemi.com
NUP1105L
10
190
30
V
3
BIAS
12.0
10.0
8.0
6.0
4.0
2.0
0.0
15
Figure 2. Clamping Voltage vs Peak Pulse Current
30
29
28
27
26
25
24
25
−60
Figure 4. Typical V
PULSE WAVEFORM
8 x 20 ms per Figure 1
BIAS
20
30
−10
V
C
, CLAMPING VOLTAGE (V)
V
TEMPERATURE (°C)
Z
25
35
40
Z
@ 1.0 mA vs. Temperature
40
90
140
45
190
50