GSOT24C-HT3-GS08 Vishay, GSOT24C-HT3-GS08 Datasheet - Page 5

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GSOT24C-HT3-GS08

Manufacturer Part Number
GSOT24C-HT3-GS08
Description
DIODE ESD 2LINE 24V LLP75
Manufacturer
Vishay
Datasheet

Specifications of GSOT24C-HT3-GS08

Voltage - Reverse Standoff (typ)
24V
Voltage - Breakdown
27V
Power (watts)
235W
Polarization
2 Channel Array - Unidirectional
Mounting Type
Surface Mount
Package / Case
LLP75-3B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
BiAs-Mode (2-line Bidirectional Asymmetrical protection mode)
With the GSOTxxC-HT3 two signal- or data-lines (L1, L2) can be protected against voltage transients. With
pin 3 connected to ground and pin 1 and pin 2 connected to a signal- or data-line which has to be protected.
As long as the voltage level on the data- or signal-line is between 0 V (ground level) and the specified Maximum
Reverse Working Voltage (V
offer a high isolation to the ground line. The protection device behaves like an open switch.
As soon as any positive transient voltage signal exceeds the break through voltage level of the protection
diode, the diode becomes conductive and shorts the transient current to ground. Now the protection device
behaves like a closed switch. The Clamping Voltage (V
plus the voltage drop at the series impedance (resistance and inductance) of the protection device.
Any negative transient signal will be clamped accordingly. The negative transient current is flowing in the
forward direction of the protection diode. The low Forward Voltage (V
the ground level.
Due to the different clamping levels in forward and reverse direction the GSOTxxC-HT3 clamping behaviour is
Bidirectional and Asymmetrical (BiAs).
If a higher surge current or Peak Pulse current (I
can also be used in parallel in order to "double" the performance.
This offers: •
Document Number 85825
Rev. 1.7, 21-Apr-08
L2
L1
L1
double surge power = double peak pulse current (2 x I
halve line inductance = reduced clamping voltage
halve line resistance = reduced clamping voltage
double Diode Capacitance (2 x C
double Reverse leakage current (2 x I
For technical support, please contact: ESD-Protection@vishay.com
RWM
) the protection diode between pin 2 and pin 3 and between pin 1 and pin 3
2
2
3
GSOT03C-HT3 to GSOT36C-HT3
3
1
1
PP
D
) is needed, both protection diodes in the GSOTxxC-HT3
)
C
R
) is defined by the BReakthrough Voltage (V
)
20240
F
) clamps the negative transient close to
PPM
)
Vishay Semiconductors
20239
www.vishay.com
BR
) level
5

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