P6SMB36CAT3G ON Semiconductor, P6SMB36CAT3G Datasheet - Page 2

• Manufacturer Part Number: P6SMB36CAT3G
• Description: TVS ZENER BIDIRECT 600W 36V SMB
• Manufacturer: ON Semiconductor

Specifications of P6SMB36CAT3G

• Voltage - Reverse Standoff (typ): 30.8V
• Voltage - Breakdown: 34.2V
• Power (watts): 600W
• Polarization: Bidirectional
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Polarity: Bidirectional
• Clamping Voltage: 49.9 V
• Operating Voltage: 30.8 V
• Breakdown Voltage: 34.2 V
• Termination Style: SMD/SMT
• Peak Surge Current: 12 A
• Peak Pulse Power Dissipation: 600 W
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Dimensions: 3.81(Max) mm W x 4.57(Max) mm L
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: P6SMB36CAT3GOS; P6SMB36CAT3GOS; P6SMB36CAT3GOSTR

4. A transient suppressor is normally selected according to the working peak reverse voltage (V
5. V
6. Surge current waveform per Figure 2 and derate per Figure 3 of the General Data − 600 Watt at the beginning of this group.
7. Bias Voltage = 0 V, F = 1 MHz, T
*The “G’’ suffix indicates Pb−Free package available. Please refer back to Ordering Information on front page.
ELECTRICAL CHARACTERISTICS
(T
ELECTRICAL CHARACTERISTICS
Symbol
A
V
QV
the DC or continuous peak operating voltage level.
V
P6SMB11CAT3, G
P6SMB12CAT3, G
P6SMB13CAT3, G
P6SMB15CAT3, G
P6SMB16CAT3, G
P6SMB18CAT3, G
P6SMB20CAT3, G
P6SMB22CAT3, G
P6SMB24CAT3, G
P6SMB27CAT3, G
P6SMB30CAT3, G
P6SMB33CAT3, G
P6SMB36CAT3, G
P6SMB39CAT3, G
P6SMB43CAT3, G
P6SMB47CAT3, G
P6SMB51CAT3, G
P6SMB56CAT3, G
P6SMB62CAT3, G
P6SMB68CAT3, G
P6SMB75CAT3, G
P6SMB82CAT3, G
P6SMB91CAT3, G
= 25°C unless otherwise noted)
I
RWM
V
I
PP
I
BR
BR
R
T
C
BR
measured at pulse test current I
Device*
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V
Breakdown Voltage @ I
Test Current
Maximum Temperature Coefficient of V
Marking
Device
11C
12C
13C
15C
16C
18C
20C
22C
24C
27C
30C
33C
36C
39C
43C
47C
51C
56C
62C
68C
75C
82C
91C
Parameter
PP
J
(Note 4)
T
= 25°C
V
Volts
10.2
12.8
13.6
15.3
17.1
18.8
20.5
23.1
25.6
28.2
30.8
33.3
36.8
40.2
43.6
47.8
58.1
64.1
70.1
77.8
11.1
RWM
9.4
53
T
at an ambient temperature of 25°C.
(Devices listed in bold, italic are ON Semiconductor Preferred devices.)
V
I
R
RWM
mA
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
@
BR
RWM
http://onsemi.com
10.5
12.4
14.3
15.2
17.1
20.9
22.8
25.7
28.5
31.4
34.2
37.1
40.9
44.7
48.5
53.2
58.9
64.6
71.3
77.9
86.5
Min
11.4
19
V
BR
Breakdown Voltage
Volts (Note 5)
11.05
13.05
15.05
27.05
33.05
39.05
43.05
47.05
51.05
75.05
Nom
12
16
18
20
22
24
30
36
56
62
68
82
91
2
Max
11.6
12.6
13.7
15.8
16.8
18.9
23.1
25.2
28.4
31.5
34.7
37.8
45.2
49.4
53.6
58.8
65.1
71.4
78.8
86.1
95.5
21
41
@ I
mA
V
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
C
T
V
BR
V
Volts
Bi−Directional TVS
C
15.6
16.7
18.2
21.2
22.5
25.2
27.7
30.6
33.2
37.5
41.4
45.7
49.9
53.9
59.3
64.8
70.1
RWM
103
113
125
V
77
85
92
V
@ I
C
RWM
), which should be equal to or greater than
PP
I
PP
I
I
(Note 6)
R
T
Amps
14.4
13.2
11.2
10.1
9.3
8.6
7.8
7.1
6.5
5.8
5.3
4.8
I
I
38
36
33
28
27
24
22
20
18
16
12
I
I
I
PP
PP
R
T
V
RWM
QV
0.075
0.078
0.081
0.084
0.086
0.088
0.094
0.096
0.097
0.098
0.099
0.101
0.101
0.102
0.103
0.104
0.104
0.105
0.105
0.106
%/°C
V
0.09
0.09
0.1
BR
BR
V
C
V
(Note 7)
C
865
800
740
645
610
545
490
450
415
370
335
305
280
260
240
220
205
185
170
155
140
130
120
pF
typ