PIC16F610-I/ML Microchip Technology, PIC16F610-I/ML Datasheet - Page 143
PIC16F610-I/ML
Manufacturer Part Number
PIC16F610-I/ML
Description
IC PIC MCU FLASH 1KX14 16QFN
Manufacturer
Microchip Technology
Series
PIC® 16Fr
Datasheets
1.PIC12F609T-ISN.pdf
(26 pages)
2.PIC16F616T-ISL.pdf
(214 pages)
3.PIC16F616T-ISL.pdf
(8 pages)
Specifications of PIC16F610-I/ML
Core Size
8-Bit
Program Memory Size
1.75KB (1K x 14)
Core Processor
PIC
Speed
20MHz
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
11
Program Memory Type
FLASH
Ram Size
64 x 8
Voltage - Supply (vcc/vdd)
2 V ~ 5.5 V
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
16-QFN
Controller Family/series
PIC16F
No. Of I/o's
12
Ram Memory Size
64Byte
Cpu Speed
20MHz
No. Of Timers
2
Processor Series
PIC16F
Core
PIC
Data Bus Width
8 bit
Data Ram Size
64 B
Interface Type
RS-232 , USB
Maximum Clock Frequency
20 MHz
Number Of Programmable I/os
11
Number Of Timers
2
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
52715-96, 52716-328, 52717-734
Development Tools By Supplier
PG164130, DV164035, DV244005, DV164005, PG164120, ICE2000
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
AC162083 - HEADER MPLAB ICD2 PIC16F616 8/14AC164324 - MODULE SKT FOR MPLAB 8DFN/16QFNXLT16QFN1 - SOCKET TRANSITION 14DIP TO 16QFN
Eeprom Size
-
Data Converters
-
Connectivity
-
Lead Free Status / Rohs Status
Details
- Current page: 143 of 214
- Download datasheet (4Mb)
15.0
Absolute Maximum Ratings
Ambient temperature under bias..........................................................................................................-40° to +125°C
Storage temperature ........................................................................................................................ -65°C to +150°C
Voltage on V
Voltage on MCLR with respect to Vss ............................................................................................... -0.3V to +13.5V
Voltage on all other pins with respect to V
Total power dissipation
Maximum current out of V
Maximum current into V
Input clamp current, I
Output clamp current, I
Maximum output current sunk by any I/O pin.................................................................................................... 25 mA
Maximum output current sourced by any I/O pin .............................................................................................. 25 mA
Maximum current sunk by PORTA and PORTC (combined) ........................................................................... 90 mA
Maximum current sourced PORTA and PORTC (combined) ........................................................................... 90 mA
Note 1:
© 2009 Microchip Technology Inc.
† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operation listings of this specification is not implied. Exposure above maximum rating conditions for
extended periods may affect device reliability.
ELECTRICAL SPECIFICATIONS
Power dissipation is calculated as follows: P
I
OL
DD
).
with respect to V
IK
(1)
OK
(V
DD
............................................................................................................................... 800 mW
I
SS
(Vo < 0 or Vo >V
< 0 or V
pin ......................................................................................................................... 95 mA
pin ...................................................................................................................... 95 mA
SS
I
> V
(†)
................................................................................................... -0.3V to +6.5V
DD
SS
)...............................................................................................................± 20 mA
DD
PIC16F610/616/16HV610/616
........................................................................... -0.3V to (V
).........................................................................................................± 20 mA
DIS
= V
DD
x {I
DD
– ∑ I
OH
} + ∑ {(V
DD
– V
OH
) x I
DS41288F-page 143
OH
} + ∑(V
DD
+ 0.3V)
O
l x
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