ATTINY261-20PU Atmel, ATTINY261-20PU Datasheet - Page 177

IC MCU AVR 2K FLASH 20MHZ 20-DIP

ATTINY261-20PU

Manufacturer Part Number
ATTINY261-20PU
Description
IC MCU AVR 2K FLASH 20MHZ 20-DIP
Manufacturer
Atmel
Series
AVR® ATtinyr
Datasheets

Specifications of ATTINY261-20PU

Core Processor
AVR
Core Size
8-Bit
Speed
20MHz
Connectivity
USI
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
16
Program Memory Size
2KB (1K x 16)
Program Memory Type
FLASH
Eeprom Size
128 x 8
Ram Size
128 x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 11x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
20-DIP (0.300", 7.62mm)
Processor Series
ATTINY2x
Core
AVR8
Data Bus Width
8 bit
Data Ram Size
128 B
Interface Type
2-Wire/SPI/USI
Maximum Clock Frequency
20 MHz
Number Of Programmable I/os
16
Number Of Timers
2
Operating Supply Voltage
2.7 V to 5.5 V
Maximum Operating Temperature
+ 85 C
Mounting Style
Through Hole
3rd Party Development Tools
EWAVR, EWAVR-BL
Development Tools By Supplier
ATAVRDRAGON, ATSTK500, ATSTK600, ATAVRISP2, ATAVRONEKIT
Minimum Operating Temperature
- 40 C
On-chip Adc
11-ch x 10-bit
Data Rom Size
128 B
Height
4.95 mm
Length
26.92 mm
Supply Voltage (max)
5.5 V
Supply Voltage (min)
2.7 V
Width
7.11 mm
For Use With
ATSTK600 - DEV KIT FOR AVR/AVR32ATAVRBC100 - REF DESIGN KIT BATTERY CHARGER770-1007 - ISP 4PORT ATMEL AVR MCU SPI/JTAGATSTK505 - ADAPTER KIT FOR 14PIN AVR MCU
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ATTINY261-20PU
Manufacturer:
ATMEL
Quantity:
256
Figure 18-2. Serial Programming Instruction example
18.7
18.7.1
2588E–AVR–08/10
Byte 1
Parallel Programming
Signal Names
Load Program Memory Page (High/Low Byte)/
Load EEPROM Memory Page (page access)
Bit 15 B
Byte 2
Adr MSB
Adr dr M
A
r MS S B
If the LSB in RDY/BSY data byte out is ‘1’, a programming operation is still pending. Wait until
this bit returns ‘0’ before the next instruction is carried out.
Within the same page, the low data byte must be loaded prior to the high data byte.
After data is loaded to the page buffer, program the EEPROM page, see
177.
This section describes how to parallel program and verify Flash Program memory, EEPROM
Data memory, Memory Lock bits, and Fuse bits. Pulses are assumed to be at least 250 ns in
length, unless otherwise noted.
In this section, some pins are referenced by signal names describing their functionality during
parallel programming, see
are referenced by pin names.
Byte 3
Adr LSB
Page Offset
0
Serial Programming Instruction
Byte 4
Program Memory/
EEPROM Memory
Figure 18-3
Page Buffer
Page N-1
Page 0
Page 1
Page 2
and
Byte 1
Table
Page Number
18-12. Pins not described in the following table
Bit 15 B
Byte 2
Write Program Memory Page/
Write EEPROM Memory Page
Adr MSB
Byte 3
Adr LSB
A A dr dr LS
LSB
SB
Figure 18-2 on page
0
Byte 4
177

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