PIC18LF46J50-I/PT Microchip Technology, PIC18LF46J50-I/PT Datasheet - Page 500
PIC18LF46J50-I/PT
Manufacturer Part Number
PIC18LF46J50-I/PT
Description
IC PIC MCU FLASH 64K 2V 44-TQFP
Manufacturer
Microchip Technology
Series
PIC® XLP™ 18Fr
Datasheets
1.PIC18LF24J10-ISS.pdf
(32 pages)
2.PIC18LF24J50-ISS.pdf
(554 pages)
3.PIC18LF24J50-ISS.pdf
(12 pages)
Specifications of PIC18LF46J50-I/PT
Program Memory Type
FLASH
Program Memory Size
64KB (32K x 16)
Package / Case
44-TQFP, 44-VQFP
Core Processor
PIC
Core Size
8-Bit
Speed
48MHz
Connectivity
I²C, SPI, UART/USART, USB
Peripherals
Brown-out Detect/Reset, DMA, POR, PWM, WDT
Number Of I /o
34
Ram Size
3.8K x 8
Voltage - Supply (vcc/vdd)
2 V ~ 3.6 V
Data Converters
A/D 13x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Processor Series
PIC18LF
Core
PIC
Data Bus Width
8 bit
Data Ram Size
4 KB
Interface Type
EUSART, I2C, SPI
Maximum Clock Frequency
31 KHz
Number Of Programmable I/os
22
Number Of Timers
5
Operating Supply Voltage
2 V to 3.6 V
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
3rd Party Development Tools
52715-96, 52716-328, 52717-734, 52712-325, EWPIC18
Development Tools By Supplier
PG164130, DV164035, DV244005, DV164005, PG164120, DM183032, DV164136, MA180024, DM183022
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 13 Channel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
PIC18LF46J50-I/PT
Manufacturer:
Microchip Technology
Quantity:
10 000
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PIC18F46J50 FAMILY
TABLE 29-1:
TABLE 29-2:
TABLE 29-3:
DS39931C-page 500
DC CHARACTERISTICS
D130
D131
D132B V
D133A T
D133B T
D134
D135
Operating Conditions: 3.0V < V
D300
D301
D302
300
301
Note 1:
Operating Conditions: 3.0V < V
D310
D311
D312
310
Note 1:
Param
Param
No.
Param
No.
No.
† Data in “Typ” column is at 3.3V, 25°C unless otherwise stated. These parameters are for design guidance
E
V
T
I
DDP
Sym
IW
IE
RETD
P
PR
PEW
only and are not tested.
Response time measured with one comparator input at V
V
Settling time measured while CVRR = 1 and CVR<3:0> bits transition from ‘0000’ to ‘1111’.
V
VR
VR
T
DD
V
V
V
CMRR
T
T
SET
RES
RESP
MC
IOFF
ICM
IRV
Sym
.
AA
UR
Sym
Program Flash Memory
Cell Endurance
V
V
Write
Self-Timed Write Cycle Time
Self-Timed Block Erase Cycle
Time
Characteristic Retention
Supply Current during
Programming
2
MEMORY PROGRAMMING REQUIREMENTS
COMPARATOR SPECIFICATIONS
VOLTAGE REFERENCE SPECIFICATIONS
OV
DD
DDCORE
core for Read
Resolution
Absolute Accuracy
Unit Resistor Value (R)
Settling Time
Input Offset Voltage
Input Common Mode Voltage
Internal Reference Voltage
Common Mode Rejection Ratio
Response Time
Comparator Mode Change to
Output Valid
Characteristic
for Self-Timed Erase or
Characteristics
Characteristics
DD
DD
(1)
< 3.6V, -40°C < T
< 3.6V, -40°C < T
(1)
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C ≤ T
V
2.25
Min
10K
A
A
20
—
—
—
MIN
V
< +85°C (unless otherwise stated)
< +85°C (unless otherwise stated)
DD
Min
—
—
—
/24
0.57
Min
—
55
—
—
Typ†
0
33.0
2.8
—
—
—
—
3
Typ
2k
—
—
—
DD
/2, while the other input transitions from V
0.60
+/-5
Typ
150
—
—
—
Max
2.75
2.75
—
—
—
—
—
V
Max
DD
1/2
10
—
/32
Units
Year Provided no other
E/W -40°C to +85°C
mA
ms
ms
+/-25
0.63
Max
V
V
V
400
10
—
Units
DD
LSb
LSb
A
μs
Ω
≤ +85°C for industrial
© 2009 Microchip Technology Inc.
V
voltage
64 bytes
specifications are violated
MIN
Units
= Minimum operating
mV
dB
ns
μs
V
V
Conditions
Comments
Comments
SS
to
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