STM8S903K3T6C STMicroelectronics, STM8S903K3T6C Datasheet - Page 69

• Manufacturer Part Number: STM8S903K3T6C
• Description: MCU 8BIT 8K MEMORY 32-LQFP
• Manufacturer: STMicroelectronics
• Series: STM8Sr

Specifications of STM8S903K3T6C

• Core Processor: STM8
• Core Size: 8-Bit
• Speed: 16MHz
• Connectivity: I²C, IrDA, LIN, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Number Of I /o: 28
• Program Memory Size: 8KB (8K x 8)
• Program Memory Type: FLASH
• Eeprom Size: 640 x 8
• Ram Size: 1K x 8
• Voltage - Supply (vcc/vdd): 2.95 V ~ 5.5 V
• Data Converters: A/D 7x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 32-LQFP
• Processor Series: STM8S90x
• Core: STM8
• Data Bus Width: 8 bit
• Data Ram Size: 1 KB
• Interface Type: I2C, SPI, UART
• Maximum Clock Frequency: 16 MHz
• Number Of Programmable I/os: 28
• Number Of Timers: 7
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: EWSTM8
• Development Tools By Supplier: STICE-SYS001
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 10 bit, 7 Channel
• For Use With: 497-10593 - KIT STARTER FOR STM8S207/8 SER
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-8944

STM8S903K3 STM8S903F3
Symbol
V
V
R
t
I
I
I
(1)
tested in production.
(2)
R
lkg
lkg ana
lkg(inj)
IH
hys
pu
, t
Data based on characterisation results, not tested in production.
Hysteresis voltage between Schmitt trigger switching levels. Based on characterization results, not
F
Parameter
Input high level voltage
Hysteresis
Pull-up resistor
Rise and fall time
(10 % - 90 %)
Digital input leakage current
Analog input leakage current
Leakage current in adjacent
I/O
(1)
Figure 22: Typical V
Conditions
V
Fast I/Os
Load = 50 pF
Standard and high sink
I/Os
Load = 50 pF
V
V
Injection current ±4 mA
DocID15590 Rev 5
DD
SS
SS
≤ V
≤ V
= 5 V, V
IL
IN
IN
and V
≤V
≤ V
IN
DD
DD
= V
IH
vs V
SS
DD
Min
0.7 x
V
30
@ 4 temperatures
DD
Typ
700
45
Electrical characteristics
Max
V
0.3
60
20
125
±1
±250
±1
DD
(2)
(2)
(2)
(2)
+
(2)
Unit
mV
kΩ
ns
μA
nA
μA
69/113