STM8S208CBT6 STMicroelectronics, STM8S208CBT6 Datasheet - Page 70
![MCU 8BIT 128K MEMORY 48-LQFP](/photos/12/14/121494/stm8s208cbt6_sml.jpg)
STM8S208CBT6
Manufacturer Part Number
STM8S208CBT6
Description
MCU 8BIT 128K MEMORY 48-LQFP
Manufacturer
STMicroelectronics
Series
STM8Sr
Datasheet
1.STEVAL-MKI030V1.pdf
(105 pages)
Specifications of STM8S208CBT6
Core Processor
STM8
Core Size
8-Bit
Speed
24MHz
Connectivity
CAN, I²C, IrDA, LIN, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
38
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Eeprom Size
2K x 8
Ram Size
6K x 8
Voltage - Supply (vcc/vdd)
2.95 V ~ 5.5 V
Data Converters
A/D 10x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
48-LQFP
Processor Series
STM8S20x
Core
STM8
Data Bus Width
8 bit
Data Ram Size
6 KB
Interface Type
CAN, I2C, SPI, UART
Maximum Clock Frequency
24 MHz
Number Of Programmable I/os
38
Number Of Timers
9
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
EWSTM8
Development Tools By Supplier
STM8/128-MCKIT, STM8S-DISCOVERY, ST-LINK, STICE-SYS001, STX-RLINK
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 16 Channel
For Use With
497-10838 - DEMO BOARD STM8S208X497-10032 - EVAL KIT MOTOR CONTROL STM8S497-10031 - EVAL KIT TOUCH SENSING STM8S497-10592 - BOARD DAUGHTER FOR STM8S207/8497-10593 - KIT STARTER FOR STM8S207/8 SER497-8506 - BOARD EVAL FOR STM8S
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-8943
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STM8S208CBT6
Manufacturer:
ST
Quantity:
1 001
Company:
Part Number:
STM8S208CBT6
Manufacturer:
STMicroelectronics
Quantity:
10 000
Part Number:
STM8S208CBT6
Manufacturer:
ST
Quantity:
20 000
Electrical characteristics
10.3.5
70/105
Memory characteristics
RAM and hardware registers
Table 35.
1. Minimum supply voltage without losing data stored in RAM (in halt mode or under reset) or in hardware
2. Refer to
Flash program memory/data EEPROM memory
General conditions: T
Table 36.
1. Data based on characterization results, not tested in production.
2. The physical granularity of the memory is 4 bytes, so cycling is performed on 4 bytes even when a
Symbol
t
N
V
t
t
erase
Symbol
I
prog
RET
registers (only in halt mode). Guaranteed by design, not tested in production.
write/erase operation addresses a single byte.
DD
RW
DD
V
RM
Operating voltage
(all modes, execution/write/erase)
Standard programming time
(including erase) for byte/word/block
(1 byte/4 bytes/128 bytes)
Fast programming time for 1 block
(128 bytes)
Erase time for 1 block (128 bytes)
Erase/write cycles
(program memory)
Erase/write cycles (data memory)
Data retention (program memory)
after 10 k erase/write cycles at
T
Data retention (data memory) after 10
k erase/write cycles at T
Data retention (data memory) after
300k erase/write cycles at
T
Supply current (Flash programming or
erasing for 1 to 128 bytes)
Table 19 on page 58
A
A
85 °C
125 °C
RAM and hardware registers
Flash program memory/data EEPROM memory
Data retention mode
A
Parameter
= -40 to 125 °C.
Parameter
(2)
for the value of V
Doc ID 14733 Rev 11
A
85 °C
(1)
(2)
IT-max
.
f
CPU
T
T
T
T
Halt mode (or reset)
Conditions
T
RET
RET
RET
A
A
125 ° C
85 °C
Conditions
= 55° C
= 55° C
= 85° C
24 MHz
STM8S207xx, STM8S208xx
Min
300 k
2.95
10 k
20
20
1
(1)
Typ
V
1M
6
3
3
2
IT-max
Min
(2)
Max
5.5
6.6
3.3
3.3
Unit
cycles
years
V
Unit
mA
ms
ms
ms
V