MC9S08QG4CDTE Freescale Semiconductor, MC9S08QG4CDTE Datasheet - Page 287

• Manufacturer Part Number: MC9S08QG4CDTE
• Description: IC MCU 4K FLASH 10MHZ 16-TSSOP
• Manufacturer: Freescale Semiconductor
• Series: HCS08r

Specifications of MC9S08QG4CDTE

• Core Processor: HCS08
• Core Size: 8-Bit
• Speed: 20MHz
• Connectivity: I²C, SCI, SPI
• Peripherals: LVD, POR, PWM, WDT
• Number Of I /o: 12
• Program Memory Size: 4KB (4K x 8)
• Program Memory Type: FLASH
• Ram Size: 256 x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 3.6 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 16-TSSOP
• Processor Series: S08QG
• Core: HCS08
• Data Bus Width: 8 bit
• Data Ram Size: 256 B
• Interface Type: SCI/SPI
• Maximum Clock Frequency: 20 MHz
• Number Of Programmable I/os: 12
• Number Of Timers: 1
• Operating Supply Voltage: 1.8 V to 3.6 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: EWS08
• Development Tools By Supplier: DEMO9S08QG8E
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 8-ch x 10-bit
• Cpu Family: HCS08
• Device Core Size: 8b
• Frequency (max): 20MHz
• Total Internal Ram Size: 256Byte
• # I/os (max): 12
• Number Of Timers - General Purpose: 1
• Operating Supply Voltage (typ): 2.5/3.3V
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 1.8V
• Instruction Set Architecture: CISC
• Operating Temp Range: -40C to 85C
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 16
• Package Type: TSSOP
• Package: 16TSSOP
• Family Name: HCS08
• Maximum Speed: 20 MHz
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

A.11 FLASH Specifications
This section provides details about program/erase times and program-erase endurance for the FLASH
memory.
Program and erase operations do not require any special power sources other than the normal V
For more detailed information about program/erase operations, see the Memory section.
Freescale Semiconductor
1
2
3
4
Supply voltage for program/erase:
Supply voltage for read operation
Internal FCLK frequency
Internal FCLK period (1/FCLK)
Byte program time (random location)
Byte program time (burst mode)
Page erase time
Mass erase time
Program/erase endurance
Data retention
These values are hardware state machine controlled. User code does not need to count cycles. This information supplied for
calculating approximate time to program and erase.
Typical endurance for FLASH was evaluated for this product family on the 9S12Dx64. For additional information on how
Motorola defines typical endurance, please refer to Engineering Bulletin EB619/D, Typical Endurance for Nonvolatile Memory.
Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated
to 25°C using the Arrhenius equation. For additional information on how Motorola defines typical data retention, please refer
to Engineering Bulletin EB618/D, Typical Data Retention for Nonvolatile Memory.
The frequency of this clock is controlled by a software setting.
T
T = 25°C
L
to T
H
= –40°C to + 125°C
4
2
(2)
Characteristic
1
3
(2)
MC9S08QG8 and MC9S08QG4 Data Sheet, Rev. 5
(2)
Table A-15. FLASH Characteristics
T > 85 °C
T ≤ 85°C
V
Symbol
prog/erase
V
f
t
t
t
t
t
t
FCLK
Mass
D_ret
Burst
Page
Fcyc
Read
prog
10,000
Min
150
1.8
2.1
1.8
15
5
100,000
Typical
20,000
4000
100
Appendix A Electrical Characteristics
—
—
—
—
—
—
9
4
Max
6.67
200
3.6
3.6
3.6
—
—
—
DD
cycles
years
supply.
Unit
t
t
t
t
kHz
Fcyc
Fcyc
Fcyc
Fcyc
μs
V
V
285