C8051F553-IM Silicon Laboratories Inc, C8051F553-IM Datasheet - Page 36
![IC 8051 MCU 32K FLASH 24-QFN](/photos/12/15/121587/c8051f9xx_24-qfn_sml.jpg)
C8051F553-IM
Manufacturer Part Number
C8051F553-IM
Description
IC 8051 MCU 32K FLASH 24-QFN
Manufacturer
Silicon Laboratories Inc
Series
C8051F55xr
Specifications of C8051F553-IM
Program Memory Type
FLASH
Program Memory Size
32KB (32K x 8)
Package / Case
24-QFN
Core Processor
8051
Core Size
8-Bit
Speed
50MHz
Connectivity
SMBus (2-Wire/I²C), SPI, UART/USART
Peripherals
POR, PWM, Temp Sensor, WDT
Number Of I /o
18
Ram Size
2.25K x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 5.25 V
Data Converters
A/D 18x12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 125°C
Processor Series
C8051F5x
Core
8051
Data Bus Width
8 bit
Data Ram Size
2304 B
Maximum Clock Frequency
50 MHz
Number Of Programmable I/os
18
Operating Supply Voltage
1.8 V to 5.25 V
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
3rd Party Development Tools
PK51, CA51, A51, ULINK2
Development Tools By Supplier
C8051F540DK
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
336-1691 - KIT DEVELOPMENT FOR C8051F560
Eeprom Size
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
336-1686-5
- Current page: 36 of 302
- Download datasheet (3Mb)
C8051F55x/56x/57x
5. Electrical Characteristics
5.1. Absolute Maximum Specifications
Table 5.1. Absolute Maximum Ratings
36
Ambient Temperature under Bias
Storage Temperature
Voltage on V
Voltage on V
Voltage on VDDA with Respect to GND
Voltage on V
Voltage on any Port I/O Pin or RST with Respect to
GND
Maximum Total Current through V
Maximum Output Current Sunk by RST or any Port Pin
Maximum Output Current Sourced by any Port Pin
Note: Stresses
device. This is a stress rating only and functional operation of the devices at those or any other conditions
outside of those indicated in the operation listings of this specification is not implied. Exposure to maximum
rating conditions for extended periods may affect device reliability.
REGIN
DD
IO
outside of the range of the
with Respect to GND
with Respect to GND
with Respect to GND
Parameter
REGIN
or GND
“Absolute Maximum Ratings” may cause permanent damage to the
Rev. 1.1
Conditions
–0.3
–0.3
–0.3
–0.3
–0.3
Min
–55
–65
—
—
—
Typ
—
—
—
—
—
—
—
—
—
—
V
IO
Max
135
150
500
100
100
5.5
2.8
2.8
5.5
+ 0.3
Units
mA
mA
mA
°C
°C
V
V
V
V
V
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