PIC16LF1826-I/SS Microchip Technology, PIC16LF1826-I/SS Datasheet - Page 112

• Manufacturer Part Number: PIC16LF1826-I/SS
• Description: IC MCU 8BIT FLASH 20SSOP
• Manufacturer: Microchip Technology
• Series: PIC® XLP™ 16Fr

Specifications of PIC16LF1826-I/SS

• Core Size: 8-Bit
• Program Memory Size: 3.5KB (2K x 14)
• Core Processor: PIC
• Speed: 32MHz
• Connectivity: I²C, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Number Of I /o: 16
• Program Memory Type: FLASH
• Eeprom Size: 256 x 8
• Ram Size: 256 x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 3.6 V
• Data Converters: A/D 12x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 20-SSOP
• Controller Family/series: PIC16LF
• Eeprom Memory Size: 256Byte
• Ram Memory Size: 256Byte
• Cpu Speed: 32MHz
• No. Of Timers: 3
• Interface: EUSART, I2C, SPI
• Processor Series: PIC16LF
• Core: PIC
• Data Bus Width: 8 bit
• Data Ram Size: 256 B
• Interface Type: I2C, SPI, UART
• Maximum Clock Frequency: 32 KHz
• Number Of Programmable I/os: 16
• Number Of Timers: 3
• Operating Supply Voltage: 1.8 V to 3.6 V
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: 52715-96, 52716-328, 52717-734
• Development Tools By Supplier: PG164130, DV164035, DV244005, DV164005
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 10 bit, 12 Channel
• On-chip Dac: 5 bit
• A/d Bit Size: 10 bit
• A/d Channels Available: 12
• Height: 1.75 mm
• Length: 7.2 mm
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 2.3 V
• Width: 5.3 mm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

PIC16F/LF1826/27
11.2
While executing code, program memory can only be
erased by rows. A row consists of 32 words where the
EEADRL<4:0> = 0000. To erase a row:
1.
2.
3.
4.
5.
6.
11.3
Before writing, program memory should be erased
using the Erase Program Memory command.
No automatic erase occurs upon the initiation of the
write; if the program Flash needs to be erased before
writing, the row (32 words) must be erased previously.
Flash program memory may only be written to if the
destination address is in a segment of memory that is
not write-protected, as defined in bits WRT<1:0> of the
Configuration Word 2. Flash program memory must be
written in eight-word blocks. See Figure 11-2 for more
details. A block consists of eight words with sequential
addresses, with a lower boundary defined by an
address, where EEADRL<3:0> = 0000. All block writes
to program memory are done as 32-word erase by
eight-word write operations. The write operation is
edge-aligned and cannot occur across boundaries.
When the LWLO bit is ‘1’, the write sequence will only
load the buffer register and will not actually initiate the
write to program Flash:
1.
2.
3.
To write program data, it must first be loaded into the
buffer registers (see Figure 11-1). This is accomplished
by first writing the destination address to EEADRL and
EEADRH and then writing the data to EEDATA and
EEDATH. After the address and data have been set up,
then the following sequence of events must be executed:
1.
2.
3.
4.
DS41391B-page 112
Load the EEADRH and EEADRL registers with
the address of new row to be erased.
Clear the CFGS bit of the EECON1 register.
Set the EEPGD bit of the EECON1 register.
Set the FREE bit of the EECON1 register.
Write 55h, then AAh, to EECON2 (Flash
programming unlock sequence).
Set control bit WR of the EECON1 register to
begin the write operation.
Set the EEPGD, WREN and LWLO bits of the
EECON1 register.
Write 55h, then AAh, to EECON2 (Flash
programming unlock sequence).
Set control bit WR of the EECON1 register to
begin the write operation.
Set the EEPGD control bit of the EECON1
register.
Set the LWLO bit of the EECON1 register.
Write 55h, then AAh, to EECON2 (Flash
programming sequence).
Set the WR control bit of the EECON1 register.
Erasing Program Memory
Writing to Flash Program Memory
Preliminary
Up to eight buffer register locations can be written to
with correct data. If less than eight words are being writ-
ten to in the block of eight words, then the data for the
unprogrammed words should be set to all ones.
After the “BSF EECON1,WR” instruction, the processor
requires two cycles to set up the erase/write operation.
The user must place two NOP instructions after the WR
bit is set. Since data is being written to buffer registers,
the writing of the first seven words of the block appears
to occur immediately. The processor will halt internal
operations for the typical 2 ms, only during the cycle in
which the erase takes place (i.e., the last word of the
sixteen-word block erase). This is not Sleep mode as
the clocks and peripherals will continue to run. After the
eight-word write cycle, the processor will resume oper-
ation with the third instruction after the EECON1 write
instruction.
An example of the complete eight-word write sequence
is shown in Example 11-5. The initial address is loaded
into the EEADRH and EEADRL register pair; the eight
words of data are loaded using indirect addressing.
Note:
The code sequence provided in Example
12-5 must be repeated 4 times to fully
program an erased program memory row
of 32 words.
© 2009 Microchip Technology Inc.