AT90PWM316-16MU Atmel, AT90PWM316-16MU Datasheet - Page 25

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AT90PWM316-16MU

Manufacturer Part Number
AT90PWM316-16MU
Description
MCU AVR 16K FLASH 16MHZ 32-QFN
Manufacturer
Atmel
Series
AVR® 90PWM Lightingr
Datasheet

Specifications of AT90PWM316-16MU

Core Processor
AVR
Core Size
8-Bit
Speed
16MHz
Connectivity
SPI, UART/USART
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
27
Program Memory Size
16KB (16K x 8)
Program Memory Type
FLASH
Eeprom Size
512 x 8
Ram Size
1K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 11x10b; D/A 1x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 105°C
Package / Case
32-QFN
Processor Series
AT90PWMx
Core
AVR8
Data Bus Width
8 bit
Data Ram Size
1 KB
Interface Type
SPI, USART
Maximum Clock Frequency
16 MHz
Number Of Programmable I/os
53
Number Of Timers
2
Maximum Operating Temperature
+ 105 C
Mounting Style
SMD/SMT
3rd Party Development Tools
EWAVR, EWAVR-BL
Development Tools By Supplier
ATAVRDRAGON, ATSTK500, ATSTK600, ATAVRISP2, ATAVRONEKIT, ATAVRFBKIT, ATAVRISP2
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 11 Channel
Cpu Family
90P
Device Core
AVR
Device Core Size
8b
Frequency (max)
16MHz
Total Internal Ram Size
1KB
# I/os (max)
53
Number Of Timers - General Purpose
2
Operating Supply Voltage (typ)
3.3/5V
Operating Supply Voltage (max)
5.5V
Operating Supply Voltage (min)
2.7V
Instruction Set Architecture
RISC
Operating Temp Range
-40C to 105C
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
32
Package Type
QFN EP
For Use With
ATSTK600-SOIC - STK600 SOCKET/ADAPTER FOR SOICATAVRMC200 - KIT EVAL FOR AT90PWM3 ASYNCATAVRFBKIT - KIT DEMO BALLAST FOR AT90PWM2
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Quantity
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6.3.5
7710E–AVR–08/10
Preventing EEPROM Corruption
The next code examples show assembly and C functions for reading the EEPROM. The exam-
ples assume that interrupts are controlled so that no interrupts will occur during execution of
these functions.
During periods of low V
too low for the CPU and the EEPROM to operate properly. These issues are the same as for
board level systems using EEPROM, and the same design solutions should be applied.
An EEPROM data corruption can be caused by two situations when the voltage is too low. First,
a regular write sequence to the EEPROM requires a minimum voltage to operate correctly. Sec-
ondly, the CPU itself can execute instructions incorrectly, if the supply voltage is too low.
EEPROM data corruption can easily be avoided by following this design recommendation:
Keep the AVR RESET active (low) during periods of insufficient power supply voltage. This can
be done by enabling the internal Brown-out Detector (BOD). If the detection level of the internal
BOD does not match the needed detection level, an external low V
be used. If a reset occurs while a write operation is in progress, the write operation will be com-
pleted provided that the power supply voltage is sufficient.
Assembly Code Example
C Code Example
TABLE 4.
EEPROM_read:
unsigned char EEPROM_read(unsigned int uiAddress)
{
}
; Wait for completion of previous write
sbic EECR,EEWE
rjmp EEPROM_read
; Set up address (r18:r17) in address register
out EEARH, r18
out EEARL, r17
; Start eeprom read by writing EERE
sbi EECR,EERE
; Read data from data register
in
ret
/* Wait for completion of previous write */
while(EECR & (1<<EEWE))
/* Set up address register */
EEAR = uiAddress;
/* Start eeprom read by writing EERE */
EECR |= (1<<EERE);
/* Return data from data register */
return EEDR;
;
r16,EEDR
CC,
the EEPROM data can be corrupted because the supply voltage is
AT90PWM216/316
CC
reset Protection circuit can
25

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