PIC18LF1330-I/SO Microchip Technology, PIC18LF1330-I/SO Datasheet - Page 281

• Manufacturer Part Number: PIC18LF1330-I/SO
• Description: IC PIC MCU FLASH 4KX16 18SOIC
• Manufacturer: Microchip Technology
• Series: PIC® 18Fr

Specifications of PIC18LF1330-I/SO

• Core Size: 8-Bit
• Program Memory Size: 8KB (4K x 16)
• Oscillator Type: Internal
• Core Processor: PIC
• Speed: 40MHz
• Connectivity: UART/USART
• Peripherals: Brown-out Detect/Reset, LVD, POR, PWM, WDT
• Number Of I /o: 16
• Program Memory Type: FLASH
• Eeprom Size: 128 x 8
• Ram Size: 256 x 8
• Voltage - Supply (vcc/vdd): 2 V ~ 5.5 V
• Data Converters: A/D 4x10b
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 18-SOIC (7.5mm Width)
• Controller Family/series: PIC18
• No. Of I/o's: 16
• Eeprom Memory Size: 128Byte
• Ram Memory Size: 256Byte
• Cpu Speed: 40MHz
• No.: RoHS Compliant
• Processor Series: PIC18LF
• Core: PIC
• Data Bus Width: 8 bit
• Data Ram Size: 256 B
• Interface Type: EUSART
• Maximum Clock Frequency: 40 MHz
• Number Of Programmable I/os: 16
• Number Of Timers: 2
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: 52715-96, 52716-328, 52717-734, 52712-325, EWPIC18
• Development Tools By Supplier: PG164130, DV164035, DV244005, DV164005, PG164120, DV164136
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 10 bit, 4 Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TABLE 23-1:
 2009 Microchip Technology Inc.
DC CHARACTERISTICS
D120
D121
D122
D123
D124
D125
D130
D131
D132B V
D133A T
D134
D135
Note 1:
Param
No.
† Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance
E
V
T
T
T
I
E
V
T
I
DDP
DDP
Sym
RETD
REF
IW
RETD
D
DRW
DEW
P
PR
PEW
only and are not tested.
Refer to Section 7.8 for a more detailed discussion on data EEPROM endurance.
Data EEPROM Memory
Byte Endurance
V
Erase/Write Cycle Time
Characteristic Retention
Number of Total Erase/Write
Cycles before Refresh
Supply Current during
Programming
Program Flash Memory
Cell Endurance
V
V
Self-Timed Write Cycle Time
Characteristic Retention
Supply Current during
Programming
MEMORY PROGRAMMING REQUIREMENTS
DD
DD
DD
for Read/Write
for Read
for Self-Timed Write
Characteristic
(1)
Standard Operating Conditions (unless otherwise stated)
Operating temperature
100K
V
V
V
3.59
1.79
10K
Min
1M
40
40
—
—
MIN
MIN
MIN
100K
Typ†
4.10
10M
2.05
100
1M
10
10
—
—
—
—
Max
4.86
2.43
PIC18F1230/1330
5.5
5.5
5.5
—
—
—
—
—
—
—
-40°C  T
-40°C  T
Units
Year Provided no other
Year Provided no other
E/W -40C to +85C
E/W -40°C to +85°C
E/W -40C to +85C
mA
mA
ms
ms
V
V
V
A
A
Using EECON to read/write
V
voltage
specifications are violated
V
voltage
V
voltage
specifications are violated
 +85°C for industrial
 +125°C for extended
MIN
MIN
MIN
= Minimum operating
= Minimum operating
= Minimum operating
Conditions
DS39758D-page 281