PIC16C57-XT/P Microchip Technology, PIC16C57-XT/P Datasheet - Page 84
![IC MCU OTP 2KX12 28DIP](/photos/7/29/72985/150-28-dip_wide_sml.jpg)
PIC16C57-XT/P
Manufacturer Part Number
PIC16C57-XT/P
Description
IC MCU OTP 2KX12 28DIP
Manufacturer
Microchip Technology
Series
PIC® 16Cr
Specifications of PIC16C57-XT/P
Program Memory Type
OTP
Program Memory Size
3KB (2K x 12)
Package / Case
28-DIP (0.600", 15.24mm)
Core Processor
PIC
Core Size
8-Bit
Speed
4MHz
Peripherals
POR, WDT
Number Of I /o
20
Ram Size
72 x 8
Voltage - Supply (vcc/vdd)
3 V ~ 6.25 V
Oscillator Type
External
Operating Temperature
0°C ~ 70°C
Processor Series
PIC16C
Core
PIC
Data Bus Width
8 bit
Data Ram Size
72 B
Maximum Clock Frequency
4 MHz
Number Of Programmable I/os
20
Number Of Timers
1
Maximum Operating Temperature
+ 70 C
Mounting Style
Through Hole
3rd Party Development Tools
52715-96, 52716-328, 52717-734
Development Tools By Supplier
ICE2000
Minimum Operating Temperature
0 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
XLT28XP - SOCKET TRANSITION ICE 28DIPAC164001 - MODULE SKT PROMATEII 18/28DIP
Eeprom Size
-
Data Converters
-
Connectivity
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
PIC16C57-XT/P
Manufacturer:
Microchip Technology
Quantity:
1 804
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PIC16C5X
13.2
DS30453D-page 82
PIC16CR54A-04E, 10E, 20E
D001
D002
D003
D004
D010
D020
Note 1: This is the limit to which V
Param
(Extended)
No.
2: The supply current is mainly a function of the operating voltage and frequency. Other factors such as bus
3: Does not include current through R
†
*
DC Characteristics:PIC16CR54A-04E, 10E, 20E (Extended)
Symbol
loading, oscillator type, bus rate, internal code execution pattern and temperature also have an impact on
the current consumption.
formula: I
V
S
guidance only and is not tested.
Data in the Typical (“Typ”) column is based on characterization results at 25 C. This data is for design
V
V
These parameters are characterized but not tested.
a) The test conditions for all I
b) For standby current measurements, the conditions are the same, except that the device is in SLEEP
I
I
POR
VDD
DD
PD
DD
DR
wave, from rail-to-rail; all I/O pins tristated, pulled to V
disabled as specified.
mode.The power-down current in SLEEP mode does not depend on the oscillator type.
Supply Voltage
RC, XT and LP modes
HS mode
RAM Data Retention Voltage
V
Power-on Reset
V
on Reset
Supply Current
RC
HS mode
HS mode
Power-down Current
R
DD
DD
= V
(3)
Start Voltage to ensure
Rise Rate to ensure Power-
and XT modes
DD
/2R
Characteristic
EXT
(2)
(mA) with R
DD
can be lowered in SLEEP mode without losing RAM data.
(2)
DD
measurements in active Operation mode are: OSC1 = external square
EXT
EXT
(1)
. The current through the resistor can be estimated by the
Preliminary
in k .
Standard Operating Conditions (unless otherwise specified)
Operating Temperature
0.05*
3.25
Min
4.5
—
—
—
—
—
—
—
Typ†
1.5*
V
1.8
4.8
9.0
5.0
0.8
—
—
—
SS
SS
Max
6.0
5.5
3.3
, T0CKI = V
—
—
—
10
20
22
18
Units
V/ms
mA
mA
mA
–40°C
V
V
V
V
A
A
DD
, MCLR = V
Device in SLEEP mode
See Section 5.1 for details on
Power-on Reset
See Section 5.1 for details on
Power-on Reset
F
F
F
V
V
OSC
OSC
OSC
DD
DD
T
2002 Microchip Technology Inc.
A
= 3.25V, WDT enabled
= 3.25V, WDT disabled
= 4.0 MHz, V
= 10 MHz, V
= 16 MHz, V
+125°C for extended
Conditions
DD
; WDT enabled/
DD
DD
DD
= 5.5V
= 5.5V
= 5.5V
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