PIC18LF2523-I/ML Microchip Technology, PIC18LF2523-I/ML Datasheet - Page 16

IC PIC MCU FLASH 16KX16 28QFN

PIC18LF2523-I/ML

Manufacturer Part Number
PIC18LF2523-I/ML
Description
IC PIC MCU FLASH 16KX16 28QFN
Manufacturer
Microchip Technology
Series
PIC® 18Fr

Specifications of PIC18LF2523-I/ML

Core Size
8-Bit
Program Memory Size
32KB (16K x 16)
Core Processor
PIC
Speed
40MHz
Connectivity
I²C, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, HLVD, POR, PWM, WDT
Number Of I /o
25
Program Memory Type
FLASH
Eeprom Size
256 x 8
Ram Size
1.5K x 8
Voltage - Supply (vcc/vdd)
2 V ~ 5.5 V
Data Converters
A/D 10x12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
28-VQFN Exposed Pad, 28-HVQFN, 28-SQFN, 28-DHVQFN
Controller Family/series
PIC18
No. Of I/o's
25
Eeprom Memory Size
256Byte
Ram Memory Size
1.5KB
Cpu Speed
40MHz
No. Of Timers
4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
PIC18LF2523-I/ML
Quantity:
8 000
PIC18F2423/2523/4423/4523
3.3
Data EEPROM is accessed one byte at a time via an
Address Pointer (register pair EEADRH:EEADR) and a
data latch (EEDATA). Data EEPROM is written by
loading EEADRH:EEADR with the desired memory
location, EEDATA with the data to be written and initiat-
ing a memory write by appropriately configuring the
EECON1 register. A byte write automatically erases the
location and writes the new data (erase-before-write).
When using the EECON1 register to perform a data
EEPROM write, both the EEPGD and CFGS bits must
be cleared (EECON1<7:6> = 00). The WREN bit must
be set (EECON1<2> = 1) to enable writes of any sort
and this must be done prior to initiating a write
sequence. The write sequence is initiated by setting the
WR bit (EECON1<1> = 1).
The write begins on the falling edge of the 4th PGC
after the WR bit is set. It ends when the WR bit is
cleared by hardware.
After the programming sequence terminates, PGC must
still be held low for the time specified by parameter P10
to allow high-voltage discharge of the memory array.
FIGURE 3-7:
DS39759A-page 16
PGC
PGD
Poll WR bit
Data EEPROM Programming
4-Bit Command
1
0
2
0
3
0
4
PGD
0
PGC
P5
DATA EEPROM WRITE TIMING
BSF EECON1, WR
1
4-Bit Command
2
1
0
2
0
15 16
3
0
4
0
P5A
P5
MOVF EECON1, W, 0
1
2
PGD = Input
PGD = Input
15 16
P5A
4-Bit Command
1
Poll WR bit, Repeat until Clear
0
FIGURE 3-6:
2
0
3
0
P11A
(see below)
4
0
P5
MOVWF TABLAT
1
No
2
15 16
PROGRAM DATA FLOW
Enable Write
Set Address
Start Write
Sequence
© 2005 Microchip Technology Inc.
Set Data
Done?
WR bit
clear?
Done
Start
P5A
Yes
Yes
(see Figure 4-4)
PGD = Output
Shift Out Data
No
P10
16-Bit Data
Payload
1
n
2
n

Related parts for PIC18LF2523-I/ML