PIC18LF4680-I/PT Microchip Technology, PIC18LF4680-I/PT Datasheet - Page 430
PIC18LF4680-I/PT
Manufacturer Part Number
PIC18LF4680-I/PT
Description
IC MCU FLASH 32KX16 44TQFP
Manufacturer
Microchip Technology
Series
PIC® 18Fr
Datasheets
1.PIC16F616T-ISL.pdf
(8 pages)
2.PIC18F2221-ISO.pdf
(46 pages)
3.PIC18F4585-IPT.pdf
(482 pages)
4.PIC18F4585-IPT.pdf
(14 pages)
5.PIC18F4585-IPT.pdf
(8 pages)
6.PIC18F4585-IPT.pdf
(12 pages)
7.PIC18F4585-IPT.pdf
(4 pages)
Specifications of PIC18LF4680-I/PT
Core Size
8-Bit
Program Memory Size
64KB (32K x 16)
Core Processor
PIC
Speed
40MHz
Connectivity
CAN, I²C, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, HLVD, POR, PWM, WDT
Number Of I /o
36
Program Memory Type
FLASH
Eeprom Size
1K x 8
Ram Size
3.25K x 8
Voltage - Supply (vcc/vdd)
2 V ~ 5.5 V
Data Converters
A/D 11x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
44-TQFP, 44-VQFP
Controller Family/series
PIC18
No. Of I/o's
36
Eeprom Memory Size
1024Byte
Ram Memory Size
3328Byte
Cpu Speed
40MHz
No. Of Timers
4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
PIC18LF4680-I/PT
Manufacturer:
Microchip Technology
Quantity:
10 000
- PIC16F616T-ISL PDF datasheet
- PIC18F2221-ISO PDF datasheet #2
- PIC18F4585-IPT PDF datasheet #3
- PIC18F4585-IPT PDF datasheet #4
- PIC18F4585-IPT PDF datasheet #5
- PIC18F4585-IPT PDF datasheet #6
- PIC18F4585-IPT PDF datasheet #7
- Current page: 430 of 482
- Download datasheet (9Mb)
PIC18F2585/2680/4585/4680
TABLE 27-1:
DS39625C-page 428
DC Characteristics
D110
D113
D120
D121
D122
D123
D124
D130
D131
D132
D132A V
D132B V
D133
D133A T
D133A T
D134
Note 1:
Param
No.
2:
3:
† Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance
V
I
E
V
T
T
T
E
V
V
T
T
DDP
Sym
DEW
RETD
REF
IE
IW
IW
RETD
PP
D
DRW
P
PR
IE
IW
PEW
only and are not tested.
These specifications are for programming the on-chip program memory through the use of table write
instructions.
Refer to Section 7.8 “Using the Data EEPROM” for a more detailed discussion on data EEPROM
endurance.
Required only if Single-Supply Programming is disabled.
Internal Program Memory
Programming Specifications
Voltage on MCLR/V
Supply Current during
Programming
Data EEPROM Memory
Byte Endurance
V
Erase/Write Cycle Time
Characteristic Retention
Number of Total Erase/Write
Cycles before Refresh
Program Flash Memory
Cell Endurance
V
V
V
or Write
V
ICSP Block Erase Cycle Time
ICSP Erase or Write Cycle Time
(externally timed)
Self-timed Write Cycle Time
Characteristic Retention
MEMORY PROGRAMMING REQUIREMENTS
DD
DD
DD
DD
DD
for Read/Write
for Read
for Block Erase
for Externally Timed Erase
for Self-timed Write
Characteristic
PP
/RE3 pin
(2)
(1)
Preliminary
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C ≤ T
100K
V
V
V
9.00
10K
Min
1M
4.5
4.5
40
40
—
—
—
—
MIN
MIN
MIN
1
Typ†
100K
10M
100
1M
—
—
—
—
—
—
—
—
—
4
4
2
13.25
Max
5.5
5.5
5.5
5.5
5.5
10
—
—
—
—
—
—
—
—
—
Units
Year Provided no other
Year Provided no other
E/W -40°C to +85°C
E/W -40°C to +85°C
E/W -40°C to +85°C
mA
ms
ms
ms
ms
V
V
V
V
V
V
A
≤ +85°C for industrial
© 2007 Microchip Technology Inc.
(Note 3)
Using EECON to read/write
V
voltage
specifications are violated
V
voltage
Using ICSP™ port
Using ICSP port
V
voltage
V
V
specifications are violated
MIN
MIN
MIN
DD
DD
> 4.5V
> 4.5V
= Minimum operating
= Minimum operating
= Minimum operating
Conditions
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