STM8S208C8T6 STMicroelectronics, STM8S208C8T6 Datasheet - Page 70
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STM8S208C8T6
Manufacturer Part Number
STM8S208C8T6
Description
MCU 8BIT 64K FLASH 48-LQFP
Manufacturer
STMicroelectronics
Series
STM8Sr
Datasheet
1.STEVAL-MKI030V1.pdf
(105 pages)
Specifications of STM8S208C8T6
Core Processor
STM8
Core Size
8-Bit
Speed
24MHz
Connectivity
CAN, I²C, IrDA, LIN, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
38
Program Memory Size
64KB (64K x 8)
Program Memory Type
FLASH
Eeprom Size
2K x 8
Ram Size
6K x 8
Voltage - Supply (vcc/vdd)
2.95 V ~ 5.5 V
Data Converters
A/D 10x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
48-LQFP
Processor Series
STM8S20x
Core
STM8
3rd Party Development Tools
EWSTM8
Development Tools By Supplier
STICE-SYS001
Featured Product
STM32 Cortex-M3 Companion Products
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Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
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Manufacturer:
STMicroelectronics
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Electrical characteristics
10.3.5
70/105
Memory characteristics
RAM and hardware registers
Table 35.
1. Minimum supply voltage without losing data stored in RAM (in halt mode or under reset) or in hardware
2. Refer to
Flash program memory/data EEPROM memory
General conditions: T
Table 36.
1. Data based on characterization results, not tested in production.
2. The physical granularity of the memory is 4 bytes, so cycling is performed on 4 bytes even when a
Symbol
t
N
V
t
t
erase
Symbol
I
prog
RET
registers (only in halt mode). Guaranteed by design, not tested in production.
write/erase operation addresses a single byte.
DD
RW
DD
V
RM
Operating voltage
(all modes, execution/write/erase)
Standard programming time
(including erase) for byte/word/block
(1 byte/4 bytes/128 bytes)
Fast programming time for 1 block
(128 bytes)
Erase time for 1 block (128 bytes)
Erase/write cycles
(program memory)
Erase/write cycles (data memory)
Data retention (program memory)
after 10 k erase/write cycles at
T
Data retention (data memory) after 10
k erase/write cycles at T
Data retention (data memory) after
300k erase/write cycles at
T
Supply current (Flash programming or
erasing for 1 to 128 bytes)
Table 19 on page 58
A
A
85 °C
125 °C
RAM and hardware registers
Flash program memory/data EEPROM memory
Data retention mode
A
Parameter
= -40 to 125 °C.
Parameter
(2)
for the value of V
Doc ID 14733 Rev 11
A
85 °C
(1)
(2)
IT-max
.
f
CPU
T
T
T
T
Halt mode (or reset)
Conditions
T
RET
RET
RET
A
A
125 ° C
85 °C
Conditions
= 55° C
= 55° C
= 85° C
24 MHz
STM8S207xx, STM8S208xx
Min
300 k
2.95
10 k
20
20
1
(1)
Typ
V
1M
6
3
3
2
IT-max
Min
(2)
Max
5.5
6.6
3.3
3.3
Unit
cycles
years
V
Unit
mA
ms
ms
ms
V