STM8S207RBT6C STMicroelectronics, STM8S207RBT6C Datasheet - Page 68

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STM8S207RBT6C

Manufacturer Part Number
STM8S207RBT6C
Description
MCU 8BIT 128K FLASH 64-LQFP
Manufacturer
STMicroelectronics
Series
STM8Sr
Datasheet

Specifications of STM8S207RBT6C

Core Processor
STM8
Core Size
8-Bit
Speed
24MHz
Connectivity
I²C, IrDA, LIN, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
52
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Eeprom Size
2K x 8
Ram Size
6K x 8
Voltage - Supply (vcc/vdd)
2.95 V ~ 5.5 V
Data Converters
A/D 16x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
64-LQFP
Processor Series
STM8S20x
Core
STM8
3rd Party Development Tools
EWSTM8
Development Tools By Supplier
STICE-SYS001
Featured Product
STM32 Cortex-M3 Companion Products
For Use With
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Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Electrical characteristics
10.3.4
68/105
Internal clock sources and timing characteristics
Subject to general operating conditions for V
High speed internal RC oscillator (HSI)
Table 33.
1. Guaranteeed by design, not tested in production.
2. Data based on characterization results, not tested in production
Figure 18. Typical HSI frequency variation vs V
Symbol
ACC
I
t
DD(HSI)
su(HSI)
f
HSI
HSI
Frequency
Accuracy of HSI oscillator
Accuracy of HSI oscillator
(factory calibrated)
HSI oscillator wakeup
time including calibration
HSI oscillator power
consumption
HSI oscillator characteristics
Parameter
-1%
-2%
-3%
3%
2%
1%
0%
2.5
Doc ID 14733 Rev 11
3
Trimmed by the
CLK_HSITRIMR register
for given V
conditions
V
V
25 °C  T
2.95 V  V
-40 °C  T
DD
DD
3.5
 5 V,
= 5 V, T
Conditions
A
A
DD
DD
DD
4
 85 °C
A
 125 °C
V DD (V)
and T
= 25 °C
 5.5 V,
and T
4.5
DD
A
A
. f
at 4 temperatures
HSE
5
-1.0
-3.0
Min
-1.5
-2.2
5.5
STM8S207xx, STM8S208xx
(1)
(2)
ai15067
-40˚C
25˚C
85˚C
125˚C
6
Typ
170
16
250
3.0
1.0
Max
1
1.5
2.2
.0
(2)
(1)
(2)
MHz
Unit
µA
µs
%

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