MC908QY2AMDWE Freescale Semiconductor, MC908QY2AMDWE Datasheet - Page 170
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MC908QY2AMDWE
Manufacturer Part Number
MC908QY2AMDWE
Description
MCU 8BIT 1.5K FLASH W/ADC 16SOIC
Manufacturer
Freescale Semiconductor
Series
HC08r
Datasheet
1.MC908QT1ACDWE.pdf
(200 pages)
Specifications of MC908QY2AMDWE
Core Processor
HC08
Core Size
8-Bit
Speed
8MHz
Peripherals
LVD, POR, PWM
Number Of I /o
13
Program Memory Size
1.5KB (1.5K x 8)
Program Memory Type
FLASH
Ram Size
128 x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 6x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 125°C
Package / Case
16-SOIC (0.300", 7.5mm Width)
Processor Series
HC08QY
Core
HC08
Data Bus Width
8 bit
Data Ram Size
128 B
Maximum Clock Frequency
8 MHz
Number Of Programmable I/os
13
Number Of Timers
2
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Development Tools By Supplier
FSICEBASE, M68CBL05AE, DEMO908QB8, DEMO908QC16
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 6 Channel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Connectivity
-
Lead Free Status / Rohs Status
Details
- Current page: 170 of 200
- Download datasheet (2Mb)
Electrical Specifications
16.15 Memory Characteristics
170
RAM data retention voltage
FLASH program bus clock frequency
FLASH PGM/ERASE supply voltage (V
FLASH read bus clock frequency
FLASH page erase time
FLASH mass erase time
FLASH PGM/ERASE to HVEN setup time
FLASH high-voltage hold time
FLASH high-voltage hold time (mass erase)
FLASH program hold time
FLASH program time
FLASH return to read time
FLASH cumulative program hv period
FLASH endurance
FLASH data retention time
1. Values are based on characterization results, not tested in production.
2. f
3. t
4. t
5. Typical endurance was evaluated for this product family. For additional information on how Freescale Semiconductor
6. Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated
<1 K cycles
>1 K cycles
ing HVEN to 0.
t
defines Typical Endurance, please refer to Engineering Bulletin EB619.
to 25•C using the Arrhenius equation. For additional information on how Freescale Semiconductor defines Typical Data
Retention, please refer to Engineering Bulletin EB618.
RCV
Read
HV
HV
is defined as the cumulative high voltage programming time to the same row before next erase.
must satisfy this condition: t
is defined as the time it needs before the FLASH can be read after turning off the high voltage charge pump, by clear-
is defined as the frequency range for which the FLASH memory can be read.
(5)
Characteristic
(6)
(1)
NVS
MC68HC908QYA/QTA Family Data Sheet, Rev. 3
+ t
DD
NVH
)
+ t
PGS
+ (t
PROG
x 32) ≤ t
V
PGM/ERASE
Symbol
f
t
HV
t
Read
t
MErase
V
t
t
RCV
t
PROG
t
t
t
Erase
NVHL
HV
NVH
PGS
NVS
RDR
—
—
—
maximum.
(4)
(3)
(2)
10 k
Min
100
1.3
2.7
0.9
3.6
10
30
15
—
1
0
4
5
5
1
100 k
Typ
100
—
—
—
—
—
—
—
—
—
—
—
—
1
4
Freescale Semiconductor
Max
8 M
5.5
1.1
5.5
40
—
—
—
—
—
—
—
—
—
—
4
Cycles
Years
MHz
Unit
ms
ms
ms
Hz
μs
μs
μs
μs
μs
μs
V
V
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