S9S08SG4E2VTG Freescale Semiconductor, S9S08SG4E2VTG Datasheet - Page 312
![no-image](/images/manufacturer_photos/0/2/262/freescale_semiconductor_sml.jpg)
S9S08SG4E2VTG
Manufacturer Part Number
S9S08SG4E2VTG
Description
MCU 4K FLASH 16-TSSOP
Manufacturer
Freescale Semiconductor
Series
HCS08r
Datasheet
1.S9S08SG4E2CSC.pdf
(316 pages)
Specifications of S9S08SG4E2VTG
Core Processor
HCS08
Core Size
8-Bit
Speed
40MHz
Connectivity
I²C, LIN, SCI, SPI
Peripherals
LVD, POR, PWM, WDT
Number Of I /o
12
Program Memory Size
4KB (4K x 8)
Program Memory Type
FLASH
Ram Size
256 x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 105°C
Package / Case
16-TSSOP
Processor Series
S08SG
Core
HCS08
Data Bus Width
8 bit
Data Ram Size
256 B
Interface Type
I2C, SPI, SCI
Maximum Clock Frequency
40 MHz
Number Of Programmable I/os
16
Number Of Timers
2
Operating Supply Voltage
2.7 V to 5.5 V
Maximum Operating Temperature
+ 105 C
Mounting Style
SMD/SMT
3rd Party Development Tools
EWS08
Development Tools By Supplier
DEMO9S08SG32, DEMO9S08SG32AUTO, DEMO9S08SG8, DEMO9S08SG8AUTO
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 12 Channel
On-chip Dac
10 bit, 12 Channel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
Details
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
S9S08SG4E2VTG
Manufacturer:
Freescale Semiconductor
Quantity:
135
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1
Appendix A Electrical Characteristics
A.14 EMC Performance
Electromagnetic compatibility (EMC) performance is highly dependant on the environment in which the
MCU resides. Board design and layout, circuit topology choices, location and characteristics of external
components as well as MCU software operation all play a significant role in EMC performance. The
system designer should consult Freescale applications notes such as AN2321, AN1050, AN1263,
AN2764, and AN1259 for advice and guidance specifically targeted at optimizing EMC performance.
A.14.1
Microcontroller radiated RF emissions are measured from 150 kHz to 1 GHz using the TEM/GTEM Cell
method in accordance with the IEC 61967-2 and SAE J1752/3 standards. The measurement is performed
with the microcontroller installed on a custom EMC evaluation board while running specialized EMC test
software. The radiated emissions from the microcontroller are measured in a TEM cell in two package
orientations (North and East).
The maximum radiated RF emissions of the tested configuration in all orientations are less than or equal
to the reported emissions levels.
312
Radiated emissions,
electric field
Data based on qualification test results.
Parameter
Radiated Emissions
V
Symbol
Table A-17. Radiated Emissions, Electric Field
RE_TEM
MC9S08SG8 MCU Series Data Sheet, Rev. 6
package type
Conditions
T
16-TSSOP
V
A
DD
= +25
= 5 V
o
C
500 – 1000 MHz
150 – 500 MHz
0.15 – 50 MHz
50 – 150 MHz
Frequency
SAE Level
IEC Level
4 MHz crystal
16 MHzbus
f
OSC
/f
BUS
Freescale Semiconductor
Level
(Max)
–6
–9
N
0
0
1
1
dBμV
Unit
—
—
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