MC9S08QA2CDNE Freescale Semiconductor, MC9S08QA2CDNE Datasheet - Page 10
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MC9S08QA2CDNE
Manufacturer Part Number
MC9S08QA2CDNE
Description
IC MCU 8BIT 2K FLASH 8-SOIC
Manufacturer
Freescale Semiconductor
Series
HCS08r
Datasheet
1.MC9S08QA2CFQE.pdf
(32 pages)
Specifications of MC9S08QA2CDNE
Core Processor
HCS08
Core Size
8-Bit
Speed
20MHz
Peripherals
LVD, POR, PWM, WDT
Number Of I /o
4
Program Memory Size
2KB (2K x 8)
Program Memory Type
FLASH
Ram Size
160 x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 3.6 V
Data Converters
A/D 4x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
8-SOIC (3.9mm Width)
Processor Series
S08QA
Core
HCS08
Data Bus Width
8 bit
Data Ram Size
160 B
Interface Type
SCI
Maximum Clock Frequency
20 MHz
Number Of Programmable I/os
4
Number Of Timers
1
Operating Supply Voltage
3.6 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
EWS08
Development Tools By Supplier
DEMO9S08QA4
Minimum Operating Temperature
- 40 C
On-chip Adc
4-ch x 10-bit
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Connectivity
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Electrical Characteristics
3.6
This section includes information about power supply current in various operating modes.
10
Run supply current
f
Run supply current
f
Wait mode supply current
Stop1 mode supply current
Stop2 mode supply current
Stop3 mode supply current
RTI adder to stop1, stop2, or stop3
LVD adder to stop3 (LVDE = LVDSE = 1)
Bus
Bus
1.2
0.8
0.6
0.4
0.2
1
0
= 8 MHz
= 1 MHz
0.8
0.6
0.4
0.2
0
0
0
Supply Current Characteristics
–40°C
85°C
25°C
–40°C
85°C
25°C
Figure 7. Typical High-Side (Source) Characteristics
Figure 6. Typical High-Side (Source) Characteristics
–5
TYPICAL V
–5
TYPICAL V
3
3
measured in FBE mode at
measured in FBE mode at
Parameter
–10
DD
4
DD
measured in FBE at 8 MHz
– V
– V
I
OH
–10
OH
OH
(mA))
VS I
VS I
–15
I
OH
4
OH
OH
(mA)
AT V
Table 7. Supply Current Characteristics
AT V
MC9S08QA4 Series MCU Data Sheet, Rev. 3
4
DD
DD
–20
–15
= 3.0 V
= 3.0 V
–25
–20
–30
Symbol
S1I
S2I
S3I
WI
RI
RI
—
—
DD
DD
DD
DD
DD
DD
0.25
0.15
0.05
0.2
0.1
0.4
0.3
0.2
0.1
0
1
0
1
V
DD
TYPICAL V
3
2
3
2
3
3
2
3
2
3
2
3
2
3
2
—
—
(V)
–40°C
TYPICAL V
85°C
25°C
High Drive (PTxDSn = 1)
Low Drive (PTxDSn = 0)
1
I
OH
2
DD
= –3 mA
2
Typical
– V
3.5 mA
2.6 mA
490 μA
370 μA
475 nA
470 nA
600 nA
550 nA
750 nA
680 nA
300 nA
300 nA
DD
70 μA
60 μA
1 mA
OH
– V
V
DD
VS V
OH
V
DD
(V)
2
VS V
I
OH
(V)
DD
= –6 mA
AT SPEC I
–40°C,
3
DD
85°C,
25°C,
Freescale Semiconductor
AT SPEC I
1.5 mA
3
1.2 μA
5 mA
1 mA
2 μA
6 μA
Max
—
—
—
—
—
—
—
—
—
I
I
I
OH
OH
OH
OH
= 2 mA
= 2 mA
= 2 mA
OH
I
OH
4
= –10 mA
T (°C)
4
85
85
85
85
85
85
85
85
85
85
85
85
85
85
85