MCF51QE96CLK Freescale Semiconductor, MCF51QE96CLK Datasheet - Page 30
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MCF51QE96CLK
Manufacturer Part Number
MCF51QE96CLK
Description
IC MCU 32BIT 96K FLASH 80-LQFP
Manufacturer
Freescale Semiconductor
Series
MCF51QEr
Datasheet
1.MCF51QE64CLH.pdf
(38 pages)
Specifications of MCF51QE96CLK
Core Processor
Coldfire V1
Core Size
32-Bit
Speed
50MHz
Connectivity
I²C, SCI, SPI
Peripherals
LVD, PWM, WDT
Number Of I /o
70
Program Memory Size
96KB (96K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 3.6 V
Data Converters
A/D 24x12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
80-LQFP
Processor Series
MCF51QE
Core
ColdFire V1
Data Bus Width
32 bit
Data Ram Size
8 KB
Interface Type
SCI, SPI
Maximum Clock Frequency
50.33 MHz
Number Of Programmable I/os
70
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
JLINK-CF-BDM26, EWCF
Development Tools By Supplier
EVBQE128, DEMOQE128
Minimum Operating Temperature
- 40 C
On-chip Adc
12 bit, 24 Channel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MCF51QE96CLK
Manufacturer:
Freescale Semiconductor
Quantity:
10 000
Electrical Characteristics
3.13
This section provides details about program/erase times and program-erase endurance for the flash memory.
Program and erase operations do not require any special power sources other than the normal V
information about program/erase operations, see the Memory section of the MCF51QE128 Reference Manual.
30
1
2
3
4
5
The frequency of this clock is controlled by a software setting.
These values are hardware state machine controlled. User code does not need to count cycles. This information supplied
for calculating approximate time to program and erase.
The program and erase currents are additional to the standard run I
with V
Typical endurance for flash was evaluated for this product family on the HC9S12Dx64. For additional information on
how Freescale defines typical endurance, please refer to Engineering Bulletin EB619, Typical Endurance for Nonvolatile
Memory.
Typical data retention values are based on intrinsic capability of the technology measured at high temperature and
de-rated to 25°C using the Arrhenius equation. For additional information on how Freescale defines typical data retention,
please refer to Engineering Bulletin EB618, Typical Data Retention for Nonvolatile Memory.
C
D
D
D
D
P
P
P
P
C
C
DD
Supply voltage for program/erase
-40°C to 85°C
Supply voltage for read operation
Internal FCLK frequency
Internal FCLK period (1/FCLK)
Longword program time (random location)
Longword program time (burst mode)
Page erase time
Mass erase time
Longword program current
Page erase current
Program/erase endurance
Data retention
Flash Specifications
T
T = 25°C
= 3.0 V, bus frequency = 4.0 MHz.
L
to T
H
= –40°C to + 85°C
5
Characteristic
2
(2)
3
1
4
3
MCF51QE128 Series Data Sheet, Rev. 7
Table 19. Flash Characteristics
(2)
(2)
V
Symbol
prog/erase
R
R
V
f
t
t
t
t
t
t
FCLK
IDDBP
IDDPE
D_ret
Burst
Page
Mass
Fcyc
Read
prog
DD
10,000
. These values are measured at room temperatures
Min
150
1.8
1.8
—
—
—
15
5
100,000
Typical
20,000
4000
100
9.7
7.6
—
9
4
DD
supply. For more detailed
Freescale Semiconductor
Max
6.67
200
3.6
3.6
—
—
—
—
—
cycles
years
t
t
t
t
Unit
kHz
mA
mA
Fcyc
Fcyc
Fcyc
Fcyc
μs
V
V