S9S12P128J0MFT Freescale Semiconductor, S9S12P128J0MFT Datasheet - Page 522
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S9S12P128J0MFT
Manufacturer Part Number
S9S12P128J0MFT
Description
MCU 128K FLASH AUTO 48-QFN
Manufacturer
Freescale Semiconductor
Series
HCS12r
Datasheet
1.S9S12P32J0MFT.pdf
(566 pages)
Specifications of S9S12P128J0MFT
Core Processor
HCS12
Core Size
16-Bit
Speed
32MHz
Connectivity
CAN, SCI, SPI
Peripherals
LVD, POR, PWM, WDT
Number Of I /o
34
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Eeprom Size
4K x 8
Ram Size
6K x 8
Voltage - Supply (vcc/vdd)
1.72 V ~ 5.5 V
Data Converters
A/D 10x12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 125°C
Package / Case
48-QFN Exposed Pad
Controller Family/series
S12
No. Of I/o's
34
Ram Memory Size
6KB
Cpu Speed
32MHz
No. Of Timers
1
Rohs Compliant
Yes
Processor Series
S12P
Core
HCS12
3rd Party Development Tools
EWHCS12
Development Tools By Supplier
KIT33812ECUEVME, DEMO9S12PFAME
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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Electrical Characteristics
The D-Flash sector erase time is ~5ms on a new device and can extend to ~20ms as the flash is cycled.
1. Typical program and erase times are based on typical f
2. Maximum program and erase times are based on minimum f
3. t
4. Typical value for a new device
A.3.2
The reliability of the NVM blocks is guaranteed by stress test during qualification, constant process
monitors and burn-in to screen early life failures.
The data retention and program/erase cycling failure rates are specified at the operating conditions noted.
The program/erase cycle count on the sector is incremented every time a sector or mass erase event is
executed.
522
Num C
12a
12b
12c
12d
12e
10
11
1
2
3
4
5
6
7
8
9
cyc
= 1 / f
D Erase all blocks (mass erase) time
D Erase verify all blocks (blank check) time
D Unsecure Flash time
D P-Flash block erase time
D P-Flash erase verify (blank check) time
D P-Flash sector erase time
D P-Flash phrase programming time
D D-Flash sector erase time
D D-Flash erase verify (blank check) time
D D-Flash one word programming time
D D-Flash two word programming time
D D-Flash three word programming time
D D-Flash four word programming time
D D-Flash four word programming time crossing row
Bus frequency
Operating frequency
boundary
NVMBUS
NVM Reliability Parameters
Table A-18. NVM Timing Characteristics (FTMRC)
Rating
S12P-Family Reference Manual, Rev. 1.13
NVMOP
NVMOP
and maximum f
and maximum f
f
Symbol
NVMBUS
f
t
t
t
NVMOP
t
t
t
t
t
dpgm4c
t
t
t
pcheck
dcheck
dpgm1
dpgm2
dpgm3
dpgm4
pmass
t
t
check
mass
ppgm
t
pera
dera
uns
NVMBUS
Min
NVMBUS
0.8
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1
Typ
100
100
100
226
100
170
241
311
328
5
1.0
20
—
—
—
—
(4)
(1)
Freescale Semiconductor
Max
35500
33500
2800
1.05
130
130
130
285
107
185
262
339
357
32
26
26
(2)
Unit
MHz
MHz
t
t
t
ms
ms
ms
ms
ms
µs
µs
µs
µs
µs
µs
cyc
cyc
cyc
(3)
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