MC908LJ12CPBER Freescale Semiconductor, MC908LJ12CPBER Datasheet - Page 64
MC908LJ12CPBER
Manufacturer Part Number
MC908LJ12CPBER
Description
IC MCU 12K FLASH 4/8MHZ 64-LQFP
Manufacturer
Freescale Semiconductor
Series
HC08r
Datasheet
1.MC68HC98LJ12CFUE.pdf
(414 pages)
Specifications of MC908LJ12CPBER
Core Processor
HC08
Core Size
8-Bit
Speed
8MHz
Connectivity
IRSCI, SPI
Peripherals
LCD, LVD, POR, PWM
Number Of I /o
32
Program Memory Size
12KB (12K x 8)
Program Memory Type
FLASH
Ram Size
512 x 8
Voltage - Supply (vcc/vdd)
3 V ~ 5.5 V
Data Converters
A/D 6x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
64-LQFP
Controller Family/series
HC08
No. Of I/o's
32
Ram Memory Size
512Byte
Cpu Speed
8MHz
No. Of Timers
2
Embedded Interface Type
I2C, SCI, SPI
Rohs Compliant
Yes
Processor Series
HC08LJ
Core
HC08
Data Bus Width
8 bit
Data Ram Size
512 B
Interface Type
SCI, SPI
Maximum Clock Frequency
8 MHz
Number Of Programmable I/os
32
Number Of Timers
4
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Development Tools By Supplier
FSICEBASE, M68EML08LJLKE, ZK-HC08LX-A, M68CBL05CE
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 6 Channel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
Details
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MC908LJ12CPBER
Manufacturer:
Freescale Semiconductor
Quantity:
10 000
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FLASH Memory (FLASH)
4.5 FLASH Page Erase Operation
Technical Data
64
NOTE:
Use the following procedure to erase a page of FLASH memory. A page
consists of 128 consecutive bytes starting from addresses $xx00 or
$xx80. The 48-byte user interrupt vectors area also forms a page. The
48-byte user interrupt vectors cannot be erased by the page erase
operation because of security reasons. Mass erase is required to erase
this page.
Programming and erasing of FLASH locations cannot be performed by
executing code from the FLASH memory; the code must be executed
from RAM. While these operations must be performed in the order as
shown, but other unrelated operations may occur between the steps.
1. Set the ERASE bit and clear the MASS bit in the FLASH control
2. Write any data to any FLASH address within the page address
3. Wait for a time, t
4. Set the HVEN bit.
5. Wait for a time, t
6. Clear the ERASE bit.
7. Wait for a time, t
8. Clear the HVEN bit.
9. After time, t
register.
range desired.
mode.
FLASH Memory (FLASH)
rcv
(1µs), the memory can be accessed again in read
nvs
erase
nvh
(at least 10µs).
(5µs).
(1ms).
MC68HC908LJ12
Freescale Semiconductor
—
Rev. 2.1
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