MC9S08LL36CLK Freescale Semiconductor, MC9S08LL36CLK Datasheet - Page 39
MC9S08LL36CLK
Manufacturer Part Number
MC9S08LL36CLK
Description
IC MCU 8BIT 36KB FLASH 80LQFP
Manufacturer
Freescale Semiconductor
Series
HCS08r
Datasheets
1.MC9S08LL64CLH.pdf
(44 pages)
2.MC9S08LL36CLK.pdf
(2 pages)
3.MC9S08LL36CLK.pdf
(60 pages)
4.MC9S08LL36CLK.pdf
(398 pages)
Specifications of MC9S08LL36CLK
Core Processor
HCS08
Core Size
8-Bit
Speed
40MHz
Connectivity
I²C, SCI, SPI
Peripherals
LCD, LVD, POR, PWM, WDT
Number Of I /o
39
Program Memory Size
36KB (36K x 8)
Program Memory Type
FLASH
Ram Size
4K x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 3.6 V
Data Converters
A/D 10x12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
80-LQFP
Processor Series
S08LL
Core
HCS08
3rd Party Development Tools
EWS08
Development Tools By Supplier
TWR-SER, TWR-ELEV, TWR-S08LL64, TWR-SENSOR-PAK, TWR-S08LL64-KIT, TWR-LCD
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
Details
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MC9S08LL36CLK
Manufacturer:
Freescale Semiconductor
Quantity:
10 000
3.14
3.15
This section provides details about program/erase times and program-erase endurance for the Flash
memory.
Program and erase operations do not require any special power sources other than the normal V
For more detailed information about program/erase operations, see the Memory section.
Freescale Semiconductor
1
2
No.
1
2
3
4
5
6
7
8
9
No.
10
11
V
VSUPPLY = 10, BYPASS = 0
1
2
3
4
5
6
7
8
9
IREG
Max can not exceed V
C
D
D
D
D
D
D
D
D
D
LCD Specifications
Flash Specifications
C
D
D
D
D
P
P
P
P
D
LCD supply voltage
LCD frame frequency
LCD charge pump capacitance
LCD bypass capacitance
LCD glass capacitance
V
V
V
V
IREG
IREG
IREG
LCD
Supply voltage for program/erase
–40 °C to 85 °C
Supply voltage for read operation
Internal FCLK frequency
Internal FCLK period (1/FCLK)
Byte program time (random location)
Byte program time (burst mode)
Page erase time
Mass erase time
Byte program current
buffered adder
trim resolution
ripple
Characteristic
Characteristic
DD
2
2
2
–.15 V
3
MC9S08LL64 Series MCU Data Sheet, Rev. 5
Table 20. LCD Electricals, 3-V Glass
1
Table 21. Flash Characteristics
2
HRefSel = 0
HRefSel = 1
HRefSel = 0
HRefSel = 1
2
V
Symbol
prog/erase
R
V
f
t
t
t
t
t
FCLK
Mass
IDDBP
Burst
Page
Fcyc
Read
prog
Symbol
C
Δ
f
C
V
C
V
Frame
BYLCD
RTRIM
I
IREG
glass
Buff
—
—
LCD
LCD
Min
150
1.8
1.8
—
5
1.49
Min
.89
1.5
28
—
—
—
—
—
—
.9
Typical
20,000
4000
—
—
—
—
2000
1.00
1.67
9
4
4
Typ
100
100
1.5
30
—
—
—
1
1.85
8000
Max
1.15
100
100
1.8
.15
58
—
.1
Max
6.67
200
3.6
3.6
—
LCD Specifications
1
% V
DD
Unit
Hz
nF
nF
pF
μA
V
V
V
IREG
supply.
Unit
t
t
t
t
kHz
Fcyc
Fcyc
Fcyc
Fcyc
mA
μs
V
V
39