R5F212F4NFP#U0 Renesas Electronics America, R5F212F4NFP#U0 Datasheet - Page 28

• Manufacturer Part Number: R5F212F4NFP#U0
• Description: MCU 1KB FLASH 16K ROM 32-LQFP
• Manufacturer: Renesas Electronics America
• Series: R8C/2x/2Fr

Specifications of R5F212F4NFP#U0

• Core Processor: R8C
• Core Size: 16/32-Bit
• Speed: 20MHz
• Connectivity: LIN, SIO, UART/USART
• Peripherals: POR, PWM, Voltage Detect, WDT
• Number Of I /o: 25
• Program Memory Size: 16KB (16K x 8)
• Program Memory Type: FLASH
• Ram Size: 1K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Data Converters: A/D 12x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 85°C
• Package / Case: 32-LQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

R8C/2E Group, R8C/2F Group
Rev.1.00
REJ03B0222-0100
Table 5.5
NOTE:
Table 5.6
NOTES:
V
V
V
T
−
−
−
t
−
−
−
−
−
−
−
d(SR-SUS)
crsp
ofs
cref
cin
Symbol
Symbol
1. V
1. V
2. Definition of programming/erasure endurance
3. Endurance to guarantee all electrical characteristics after program and erase. (1 to Min. value can be guaranteed).
4. In a system that executes multiple programming operations, the actual erasure count can be reduced by writing to sequential
5. If an error occurs during block erase, attempt to execute the clear status register command, then execute the block erase
6. Customers desiring program/erase failure rate information should contact their Renesas technical support representative.
7. The data hold time includes time that the power supply is off or the clock is not supplied.
The programming and erasure endurance is defined on a per-block basis.
If the programming and erasure endurance is n (n = 100 or 10,000), each block can be erased n times. For example, if 1,024
1-byte writes are performed to block A, a 1 Kbyte block, and then the block is erased, the programming/erasure endurance
still stands at one.
However, the same address must not be programmed more than once per erase operation (overwriting prohibited).
addresses in turn so that as much of the block as possible is used up before performing an erase operation. For example,
when programming groups of 16 bytes, the effective number of rewrites can be minimized by programming up to 128 groups
before erasing them all in one operation. It is also advisable to retain data on the erase count of each block and limit the
number of erase operations to a certain number.
command at least three times until the erase error does not occur.
CC
CC
Dec 14, 2007
= 2.7 to 5.5 V at T
= 2.7 to 5.5 V at T
Comparator reference voltage
Comparator input voltage
Input offset voltage
Response time
Program/erase endurance
Byte program time
Block erase time
Time delay from suspend request until
suspend
Interval from erase start/restart until
following suspend request
Interval from program start/restart until
following suspend request
Time from suspend until program/erase
restart
Program, erase voltage
Read voltage
Program, erase temperature
Data hold time
Comparator Characteristics
Flash Memory (Program ROM) Electrical Characteristics
opr
opr
Page 26 of 39
(7)
Parameter
Parameter
= −20 to 85°C (N version) / −40 to 85°C (D version), unless otherwise specified.
= 0 to 60°C, unless otherwise specified.
(2)
(1)
R8C/2E Group
R8C/2F Group
Ambient temperature = 55°C
Conditions
Conditions
1,000
100
Min.
650
2.7
2.7
20
Min.
−0.3
−
−
−
0
−
0
0
−
−
(3)
(3)
5. Electrical Characteristics
Standard
Typ.
0.4
50
Standard
Typ.
−
−
−
−
−
−
−
−
−
−
−
−
−
−
97+CPU clock
3+CPU clock
× 6 cycles
× 4 cycles
V
V
Max.
CC
CC
400
Max.
±100
5.5
5.5
200
60
−
−
9
−
−
−
+0.3
−1.2
times
times
year
Unit
Unit
mV
ns
µs
µs
µs
ns
µs
°C
V
V
V
V
s