R5F212BASNLG#U0 Renesas Electronics America, R5F212BASNLG#U0 Datasheet - Page 40

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R5F212BASNLG#U0

Manufacturer Part Number
R5F212BASNLG#U0
Description
MCU FLASH 96K ROM 64-TFLGA
Manufacturer
Renesas Electronics America
Series
R8C/2x/2Br
Datasheet

Specifications of R5F212BASNLG#U0

Core Processor
R8C
Core Size
16/32-Bit
Speed
20MHz
Connectivity
I²C, LIN, SIO, SSU, UART/USART
Peripherals
POR, PWM, Voltage Detect, WDT
Number Of I /o
55
Program Memory Size
96KB (96K x 8)
Program Memory Type
FLASH
Ram Size
7K x 8
Voltage - Supply (vcc/vdd)
2.2 V ~ 5.5 V
Data Converters
A/D 12x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 85°C
Package / Case
64-TFLGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
R5F212BASNLG#U0
Manufacturer:
Renesas Electronics America
Quantity:
135
Price:
R8C/2A Group, R8C/2B Group
Rev.2.10
REJ03B0182-0210
Table 5.6
NOTES:
t
d(SR-SUS)
Symbol
1. V
2. Definition of programming/erasure endurance
3. Endurance to guarantee all electrical characteristics after program and erase. (1 to Min. value can be guaranteed).
4. Standard of block A and block B when program and erase endurance exceeds 1,000 times. Byte program time to 1,000 times
5. In a system that executes multiple programming operations, the actual erasure count can be reduced by writing to sequential
6. If an error occurs during block erase, attempt to execute the clear status register command, then execute the block erase
7. Customers desiring program/erase failure rate information should contact their Renesas technical support representative.
8. -40°C for D version.
9.
The programming and erasure endurance is defined on a per-block basis.
If the programming and erasure endurance is n (n = 100 or 10,000), each block can be erased n times. For example, if 1,024
1-byte writes are performed to block A, a 1 Kbyte block, and then the block is erased, the programming/erasure endurance
still stands at one.
However, the same address must not be programmed more than once per erase operation (overwriting prohibited).
is the same as that in program ROM.
addresses in turn so that as much of the block as possible is used up before performing an erase operation. For example,
when programming groups of 16 bytes, the effective number of rewrites can be minimized by programming up to 128 groups
before erasing them all in one operation. It is also advisable to retain data on the erase count of each block and limit the
number of erase operations to a certain number.
command at least three times until the erase error does not occur.
The data hold time includes time that the power supply is off or the clock is not supplied.
CC
Nov 26, 2007
= 2.7 to 5.5 V at T
Program/erase endurance
Byte program time
(program/erase endurance ≤ 1,000 times)
Byte program time
(program/erase endurance > 1,000 times)
Block erase time
(program/erase endurance ≤ 1,000 times)
Block erase time
(program/erase endurance > 1,000 times)
Time delay from suspend request until
suspend
Interval from erase start/restart until
following suspend request
Interval from program start/restart until
following suspend request
Time from suspend until program/erase
restart
Program, erase voltage
Read voltage
Program, erase temperature
Data hold time
Flash Memory (Data flash Block A, Block B) Electrical Characteristics
opr
Page 38 of 60
(9)
Parameter
= -20 to 85°C (N version) / -40 to 85°C (D version), unless otherwise specified.
(2)
Ambient temperature = 55 °C
Conditions
10,000
-20
Min.
650
2.7
2.2
20
0
(8)
(3)
5. Electrical Characteristics
Typ.
Standard
0.2
0.3
50
65
97+CPU clock
3+CPU clock
(4)
× 6 cycles
× 4 cycles
Max.
400
5.5
5.5
85
9
times
year
Unit
µs
µs
µs
µs
µs
ns
°C
V
V
s
s

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