HD64F3687FP Renesas Electronics America, HD64F3687FP Datasheet - Page 441
![IC H8 MCU FLASH 56K 64-LQFP](/photos/28/61/286107/64-lqfp__plqp0064kc-a_sml.jpg)
HD64F3687FP
Manufacturer Part Number
HD64F3687FP
Description
IC H8 MCU FLASH 56K 64-LQFP
Manufacturer
Renesas Electronics America
Series
H8® H8/300H Tinyr
Datasheet
1.HD64F3684GFPV.pdf
(538 pages)
Specifications of HD64F3687FP
Core Processor
H8/300H
Core Size
16-Bit
Speed
20MHz
Connectivity
I²C, SCI
Peripherals
PWM, WDT
Number Of I /o
45
Program Memory Size
56KB (56K x 8)
Program Memory Type
FLASH
Ram Size
4K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
64-LQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Available stocks
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Manufacturer
Quantity
Price
Company:
Part Number:
HD64F3687FP
Manufacturer:
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Quantity:
10 000
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HD64F3687FPI
Manufacturer:
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Quantity:
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Part Number:
HD64F3687FPIV
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
Company:
Part Number:
HD64F3687FPV
Manufacturer:
Renesas
Quantity:
1 500
Company:
Part Number:
HD64F3687FPV
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Part Number:
HD64F3687FPV
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
- Current page: 441 of 538
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Notes: 1. Make the time settings in accordance with the program/erase algorithms.
Item
Erasing
2. The programming time for 128 bytes. (Indicates the total time for which the P bit in flash
3. The time required to erase one block. (Indicates the time for which the E bit in flash
4. Programming time maximum value (t
5. Set the maximum programming count (N) according to the actual set values of z1, z2,
6. Erase time maximum value (t
7. Set the maximum erase count (N) according to the actual set value of (z), so that it
Programming count (n)
memory control register 1 (FLMCR1) is set. The program-verify time is not included.)
memory control register 1 (FLMCR1) is set. The erase-verify time is not included.)
maximum programming count (N)
and z3, so that it does not exceed the programming time maximum value (t
The wait time after P bit setting (z1, z2) should be changed as follows according to the
value of the programming count (n).
erase count (N)
does not exceed the erase time maximum value (t
Wait time after SWE
bit setting*
Wait time after ESU
bit setting*
Wait time after E bit
setting*
Wait time after E bit clear*
Wait time after ESU
bit clear*
Wait time after EV
bit setting*
Wait time after
dummy write*
Wait time after EV bit clear*
Wait time after SWE
bit clear*
Maximum erase count *
1
7
n
n
1
*
1
1
6
6
1000
1
1
1
1
z1 = 30 µs
z2 = 200 µs
1
*
6
1
*
7
1
E
(max.)) = wait time after E bit setting (z)
Symbol Test Condition Min
x
y
z
N
P
(max.)) = wait time after P bit setting (z)
E
Rev.5.00 Nov. 02, 2005 Page 407 of 500
(max.)).
Section 23 Electrical Characteristics
1
100
10
10
10
20
2
4
100
—
Typ
—
—
—
—
—
—
—
—
—
—
Values
REJ09B0027-0500
Max
—
—
100
—
—
—
—
—
—
120
maximum
P
(max.)).
Unit
µs
µs
ms
µs
µs
µs
µs
µs
µs
Times
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