D12312SVTE25 Renesas Electronics America, D12312SVTE25 Datasheet - Page 717

• Manufacturer Part Number: D12312SVTE25
• Description: MCU 3V 0K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of D12312SVTE25

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 70
• Program Memory Type: ROMless
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Program Memory Size: -
• Other names: HD6412312SVTE25; HD6412312SVTE25

• When performing programming using PROM mode on a chip that has been
Notes: 1. The flash memory is initially in the erased state when the device is shipped by Renesas
programmed/erased in an on-board programming mode, auto-erasing is recommended before
carrying out auto-programming.
2. Auto-programming should be performed once only on the same address block.
Technology. For other chips for which the erasure history is unknown, it is
recommended that auto-erasing be executed to check and supplement the initialization
(erase) level.
Additional programming cannot be carried out on address blocks that have already
been programmed.
Rev.7.00 Feb. 14, 2007 page 683 of 1108
REJ09B0089-0700
Section 17 ROM