PIC18LF4431T-I/PT Microchip Technology, PIC18LF4431T-I/PT Datasheet - Page 341
![IC MCU FLASH 8KX16 44TQFP](/photos/6/82/68251/c04-076_pt_sml.jpg)
PIC18LF4431T-I/PT
Manufacturer Part Number
PIC18LF4431T-I/PT
Description
IC MCU FLASH 8KX16 44TQFP
Manufacturer
Microchip Technology
Series
PIC® 18Fr
Datasheet
1.PIC18F2331-ISO.pdf
(392 pages)
Specifications of PIC18LF4431T-I/PT
Core Processor
PIC
Core Size
8-Bit
Speed
40MHz
Connectivity
I²C, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, LVD, Power Control PWM, QEI, POR, PWM, WDT
Number Of I /o
36
Program Memory Size
16KB (8K x 16)
Program Memory Type
FLASH
Eeprom Size
256 x 8
Ram Size
768 x 8
Voltage - Supply (vcc/vdd)
2 V ~ 5.5 V
Data Converters
A/D 9x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
44-TQFP, 44-VQFP
Processor Series
PIC18LF
Core
PIC
Data Bus Width
8 bit
Data Ram Size
768 B
Interface Type
EUSART, I2C, SPI, SSP
Maximum Clock Frequency
40 MHz
Number Of Programmable I/os
36
Number Of Timers
1 x 8
Operating Supply Voltage
2 V to 5.5 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
52715-96, 52716-328, 52717-734, 52712-325, EWPIC18
Development Tools By Supplier
PG164130, DV164035, DV244005, DV164005, PG164120, ICE2000, ICE4000, DV164136
Minimum Operating Temperature
- 40 C
On-chip Adc
9 bit
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
PIC18LF4431T-I/PT
Manufacturer:
Microchip Technology
Quantity:
10 000
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TABLE 26-1:
2010 Microchip Technology Inc.
DC CHARACTERISTICS
D110
D112
D113
D120
D121
D122
D123
D124
D130
D131
D132
D132A V
D132B V
D133
D133A T
D133A T
D134
Note 1:
Param
No.
2:
3:
† Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance
V
I
I
E
V
T
T
T
E
V
V
T
T
PP
DDP
Sym
RETD
REF
IE
IW
IW
RETD
PP
D
DRW
DEW
P
PR
IE
IW
PEW
only and are not tested.
These specifications are for programming the on-chip program memory through the use of table write
instructions.
Refer to
endurance.
Required only if Single-Supply Programming is disabled.
Internal Program Memory
Programming Specifications
Voltage on MCLR/V
Current into MCLR/V
Supply Current during
Programming
Data EEPROM Memory
Byte Endurance
V
Erase/Write Cycle Time
Characteristic Retention
Number of Total Erase/Write
Cycles before Refresh
Program Flash Memory
Cell Endurance
V
V
V
or Write
V
ICSP™ Block Erase Cycle Time
ICSP Erase or Write Cycle Time
(externally timed)
Self-Timed Write Cycle Time
Characteristic Retention
MEMORY PROGRAMMING REQUIREMENTS
DD
DD
DD
DD
DD
Section 7.9 “Using the Data EEPROM”
for Read/Write
for Read
for Block Erase
for Externally Timed Erase
for Self-Timed Write
Characteristic
PP
PP
(2)
pin
pin
PIC18F2331/2431/4331/4431
(1)
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C T
100K
V
V
V
9.00
10K
Min
1M
4.5
4.5
40
40
—
—
—
—
—
MIN
MIN
MIN
1
for a more detailed discussion on data EEPROM
100K
Typ†
10M
100
1M
—
—
—
—
—
—
—
—
—
—
4
4
2
13.25
Max
300
5.5
5.5
5.5
5.5
5.5
—
—
—
—
—
—
—
—
—
1
-40°C T
Units
Year Provided no other
Year Provided no other
E/W -40C to +85C
E/W -40°C to +85°C
E/W -40C to +85C
mA
A
ms
ms
ms
ms
V
V
V
V
V
V
A
A
+125°C for extended
+85°C for industrial
(Note 3)
Using EECON to read/write
V
voltage
specifications are violated
V
voltage
Using ICSP™ port
Using ICSP port
V
voltage
V
V
specifications are violated
MIN
MIN
MIN
DD
DD
> 4.5V
> 4.5V
= Minimum operating
= Minimum operating
= Minimum operating
Conditions
DS39616D-page 341
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