ATTINY167-15SZ Atmel, ATTINY167-15SZ Datasheet - Page 217
![MCU AVR 16K FLASH 15MHZ 20-SOIC](/photos/6/80/68042/453-20-soic_sml.jpg)
ATTINY167-15SZ
Manufacturer Part Number
ATTINY167-15SZ
Description
MCU AVR 16K FLASH 15MHZ 20-SOIC
Manufacturer
Atmel
Series
AVR® ATtinyr
Datasheet
1.ATTINY167-15MD.pdf
(283 pages)
Specifications of ATTINY167-15SZ
Core Processor
AVR
Core Size
8-Bit
Speed
16MHz
Connectivity
I²C, LIN, SPI, UART/USART, USI
Peripherals
Brown-out Detect/Reset, POR, PWM, Temp Sensor, WDT
Number Of I /o
16
Program Memory Size
16KB (8K x 16)
Program Memory Type
FLASH
Eeprom Size
512 x 8
Ram Size
512 x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 11x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 125°C
Package / Case
20-SOIC (7.5mm Width)
For Use With
ATSTK600-SOIC - STK600 SOCKET/ADAPTER FOR SOIC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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20. Flash Programming
20.1
20.1.1
20.1.2
7728G–AVR–06/10
Self-Programming the Flash
Performing Page Erase by SPM
Filling the Temporary Buffer (Page Loading)
The device provides a Self-Programming mechanism for downloading and uploading program
code by the MCU itself. The Self-Programming can use any available data interface (i.e. LIN,
USART, ...) and associated protocol to read code and write (program) that code into the Pro-
gram memory.
The Program memory is updated in a page by page fashion. Before programming a page with
the data stored in the temporary page buffer, the page must be erased. The temporary page
buffer is filled one word at a time using SPM and the buffer can be filled either before the Page
Erase command or between a Page Erase and a Page Write operation:
If only a part of the page needs to be changed, the rest of the page must be stored (for exam-
ple in the temporary page buffer) before the erase, and then be re-written. When using
alternative 1, the Boot Loader provides an effective Read-Modify-Write feature which allows
the user software to first read the page, do the necessary changes, and then write back the
modified data. If alternative 2 is used, it is not possible to read the old data while loading since
the page is already erased. The temporary page buffer can be accessed in a random
sequence. It is essential that the page address used in both the Page Erase and Page Write
operation is addressing the same page.
To execute Page Erase, set up the address in the Z-pointer, write “00000011
and execute SPM within four clock cycles after writing SPMCSR. The data in R1 and R0 is
ignored. The page address must be written to PCPAGE in the Z-register. Other bits in the
Z-pointer will be ignored during this operation.
To write an instruction word, set up the address in the Z-pointer and data in R1:R0, write
“00000001
The content of PCWORD in the Z-register is used to address the data in the temporary buffer.
The temporary buffer will auto-erase after a Page Write operation or by writing the CTPB bit in
SPMCSR. It is also erased after a system reset. Note that it is not possible to write more than
one time to each address without erasing the temporary buffer.
If the EEPROM is written in the middle of an SPM Page Load operation, all data loaded will be
lost.
• Alternative 1, fill the buffer before a Page Erase
• Alternative 2, fill the buffer after Page Erase
• The CPU is halted during the Page Erase operation.
– Fill temporary page buffer
– Perform a Page Erase
– Perform a Page Write
– Perform a Page Erase
– Fill temporary page buffer
– Perform a Page Write
b
” to SPMCSR and execute SPM within four clock cycles after writing SPMCSR.
ATtiny87/ATtiny167
b
” to SPMCSR
217
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