HD6473837H Renesas Electronics America, HD6473837H Datasheet - Page 138
HD6473837H
Manufacturer Part Number
HD6473837H
Description
IC H8 MCU OTP 60K 100QFP
Manufacturer
Renesas Electronics America
Series
H8® H8/300Lr
Datasheet
1.HD6473837HV.pdf
(562 pages)
Specifications of HD6473837H
Core Processor
H8/300L
Core Size
8-Bit
Speed
5MHz
Connectivity
SCI
Peripherals
LCD, PWM
Number Of I /o
84
Program Memory Size
60KB (60K x 8)
Program Memory Type
OTP
Ram Size
2K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 12x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-QFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
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6.5
The write, verify, and other modes are selected as shown in table 6.8 in H8/3837 PROM mode.
Table 6.8
Mode
Write
Verify
Programming
disabled
Notation:
L:
H:
V
V
The specifications for writing and reading the on-chip PROM are identical to those for the
standard HN27C101 EPROM. Page programming is not supported, however. The PROM writer
must not be set to page mode. A PROM programmer that provides only page programming mode
cannot be used. When selecting a PROM programer, check that it supports a byte-by-byte high-
speed, high-reliability programming method. Be sure to set the address range to H'0000 to
H'EDFF.
6.5.1
An efficient, high-speed, high-reliability method is available for writing and verifying the PROM
data. This method achieves high speed without voltage stress on the device and without lowering
the reliability of written data. The basic flow of this high-speed, high-reliability programming
method is shown in figure 6.8.
PP
CC
: V
: V
Low level
High level
PP
CC
level
level
H8/3837 Programming
Writing and Verifying
Mode Selection in H8/3837 PROM Mode
CE
L
L
L
L
H
H
OE
H
L
L
H
L
H
PGM
L
H
L
H
L
H
V
V
V
V
PP
PP
PP
PP
V
V
V
V
CC
CC
CC
CC
Pin
EO
Data input
Data output
High impedance
7
to EO
0
EA
Address input
Address input
Address input
16
to EA
0
121
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