MCP601-I/SN Microchip Technology, MCP601-I/SN Datasheet - Page 3
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MCP601-I/SN
Manufacturer Part Number
MCP601-I/SN
Description
IC OPAMP SNGL SUPPLY R-R 8SOIC
Manufacturer
Microchip Technology
Specifications of MCP601-I/SN
Slew Rate
2.3 V/µs
Package / Case
8-SOIC (3.9mm Width)
Amplifier Type
General Purpose
Number Of Circuits
1
Output Type
Rail-to-Rail
Gain Bandwidth Product
2.8MHz
Current - Input Bias
1pA
Voltage - Input Offset
700µV
Current - Supply
230µA
Current - Output / Channel
22mA
Voltage - Supply, Single/dual (±)
2.7 V ~ 6 V
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Number Of Channels
1
Common Mode Rejection Ratio (min)
75 dB
Input Offset Voltage
2 mV
Input Bias Current (max)
60 pA
Operating Supply Voltage
3 V, 5 V
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Shutdown
No
Supply Voltage (max)
6 V
Supply Voltage (min)
2.7 V
Technology
CMOS
Voltage Gain Db
115 dB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
-3db Bandwidth
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MCP601-I/SN
Manufacturer:
MICROCHIP
Quantity:
12 000
AC CHARACTERISTICS
MCP603 CHIP SELECT CHARACTERISTICS
FIGURE 1-1:
Timing Diagram.
Electrical Specifications: Unless otherwise indicated, T
V
Frequency Response
Gain Bandwidth Product
Phase Margin
Step Response
Slew Rate
Settling Time (0.01%)
Noise
Input Noise Voltage
Input Noise Voltage Density
Input Noise Current Density
Electrical Specifications: Unless otherwise indicated, T
V
DC Characteristics
CS Logic Threshold, Low
CS Input Current, Low
CS Logic Threshold, High
CS Input Current, High
Shutdown V
Amplifier Output Leakage in Shutdown
CS Threshold Hysteresis
Timing
CS Low to Amplifier Output Turn-on
Time
CS High to Amplifier Output High-Z Time
Current
OUT
OUT
2004 Microchip Technology Inc.
V
OUT
I
CS
I
CS
DD
SS
V
V
DD
DD
/2, R
/2, R
SS
Parameters
-700 nA (typ.)
Parameters
700 nA (typ.)
current
2 nA (typ.)
L
L
= 100 k to V
= 100 k to V
Hi-Z
MCP603 Chip Select (CS)
t
ON
DD
DD
Output Active
-230 µA (typ.)
230 µA (typ.)
2 nA (typ.)
/2 and C
/2 and C
GBWP
Sym
t
settle
PM
SR
E
e
e
L
L
i
I
I
ni
Q_SHDN
O_SHDN
ni
ni
ni
HYST
= 50 pF.
= 50 pF.
Sym
I
I
t
t
V
V
CSH
OFF
CSL
ON
t
IH
IL
OFF
Hi-Z
Min
—
—
—
—
—
—
—
—
0.8 V
A
A
V
-1.0
-2.0
Min
—
—
—
—
—
SS
= +25°C, V
= +25°C, V
DD
Typ
2.8
2.3
4.5
0.6
50
29
21
7
-0.7
100
Typ
0.7
0.3
3.1
—
—
—
1
DD
DD
= +2.7V to +5.5V, V
= +2.7V to +5.5V, V
Max
0.2 V
—
—
—
—
—
—
—
—
V
Max
2.0
10
—
—
—
—
—
DD
DD
nV/ Hz f = 1 kHz
nV/ Hz f = 10 kHz
fA/ Hz f = 1 kHz
Units
µV
MHz
V/µs
µs
°
Units
P-P
µA
µA
µA
nA
µs
ns
V
V
V
G = +1 V/V
G = +1 V/V
G = +1 V/V, 3.8V step
f = 0.1 Hz to 10 Hz
MCP601/2/3/4
SS
SS
CS = 0.2V
CS = V
CS = V
Internal switch
CS
CS
= GND, V
= GND, V
0.2V
0.8V
DD
DD
DD
DD
DD
Conditions
CM
CM
, G = +1 V/V
, G = +1 V/V, No load.
Conditions
= V
= V
DD
DD
DS21314F-page 3
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/2,