MCP6241RT-E/OT Microchip Technology, MCP6241RT-E/OT Datasheet - Page 4
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MCP6241RT-E/OT
Manufacturer Part Number
MCP6241RT-E/OT
Description
IC OPAMP SNGL 1.8V SOT23-5
Manufacturer
Microchip Technology
Datasheet
1.MCP6241UT-ELT.pdf
(38 pages)
Specifications of MCP6241RT-E/OT
Slew Rate
0.3 V/µs
Amplifier Type
General Purpose
Number Of Circuits
1
Output Type
Rail-to-Rail
Gain Bandwidth Product
550kHz
Current - Input Bias
1pA
Voltage - Input Offset
5000µV
Current - Supply
50µA
Current - Output / Channel
23mA
Voltage - Supply, Single/dual (±)
1.8 V ~ 5.5 V
Operating Temperature
-40°C ~ 125°C
Mounting Type
Surface Mount
Package / Case
SOT-23-5, SC-74A, SOT-25
Op Amp Type
Rail To Rail
No. Of Amplifiers
1
Bandwidth
550kHz
Supply Voltage Range
1.8V To 5.5V
Amplifier Case Style
SOT-23
No. Of Pins
5
Number Of Channels
1
Voltage Gain Db
110 dB
Common Mode Rejection Ratio (min)
60 dB
Input Offset Voltage
5 mV
Operating Supply Voltage
3 V, 5 V
Supply Current
0.07 mA
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
-3db Bandwidth
-
Lead Free Status / Rohs Status
Details
Other names
MCP6241RT-E/OT
MCP6241RT-E/OTTR
MCP6241RT-E/OTTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MCP6241RT-E/OT
Manufacturer:
MICROCHIP/微芯
Quantity:
20 000
MCP6241/1R/1U/2/4
AC ELECTRICAL CHARACTERISTICS
TEMPERATURE CHARACTERISTICS
1.1
The test circuits used for the DC and AC tests are
shown in
capacitors are laid out according to the rules discussed
in Section 4.6 “PCB Surface Leakage”.
FIGURE 1-1:
Most Non-Inverting Gain Conditions.
DS21882D-page 4
Electrical Characteristics: Unless otherwise indicated, T
V
AC Response
Gain Bandwidth Product
Phase Margin
Slew Rate
Noise
Input Noise Voltage
Input Noise Voltage Density
Input Noise Current Density
Electrical Characteristics: Unless otherwise indicated, V
Temperature Ranges
Extended Temperature Range
Operating Temperature Range
Storage Temperature Range
Thermal Package Resistances
Thermal Resistance, 5L-SC70
Thermal Resistance, 5L-SOT-23
Thermal Resistance, 8L-DFN (2x3)
Thermal Resistance, 8L-MSOP
Thermal Resistance, 8L-PDIP
Thermal Resistance, 8L-SOIC
Thermal Resistance, 14L-PDIP
Thermal Resistance, 14L-SOIC
Thermal Resistance, 14L-TSSOP
V
OUT
Note:
V
DD
IN
/2
≈ V
Test Circuits
R
R
DD
N
G
Figure 1-1
The internal Junction Temperature (T
/2, R
Parameters
Parameters
MCP624X
L
= 10 kΩ to V
V
AC and DC Test Circuit for
DD
and
0.1 µF
R
Figure
F
DD
/2 and C
1 µF
1-2. The bypass
C
L
L
V
= 60 pF.
GBWP
Sym
θ
θ
θ
θ
θ
θ
θ
θ
θ
L
Sym
T
T
T
PM
SR
E
JA
JA
JA
JA
JA
JA
JA
JA
JA
e
V
R
i
A
A
A
ni
ni
ni
OUT
J
L
) must not exceed the Absolute Maximum specification of +150°C.
Min
Min
-40
-40
-65
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
A
DD
= +25°C, V
= +1.8V to +5.5V and V
FIGURE 1-2:
Most Inverting Gain Conditions.
V
0.30
Typ
550
0.6
84.5
V
68
10
45
DD
Typ
331
256
206
163
120
100
85
70
—
—
—
IN
/2
DD
R
R
N
G
= +1.8 to 5.5V, V
Max
—
—
—
—
—
—
+125
+125
+150
Max
—
—
—
—
—
—
—
—
—
MCP624X
nV/√Hz
fA/√Hz
V
µV
Units
SS
V/µs
AC and DC Test Circuit for
kHz
DD
Units
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
© 2008 Microchip Technology Inc.
°
P-P
°C
°C
°C
= GND.
0.1 µF
SS
R
F
G = +1 V/V
f = 0.1 Hz to 10 Hz
f = 1 kHz
f = 1 kHz
= GND, V
(Note)
1 µF
Conditions
Conditions
C
CM
L
= V
V
L
V
R
DD
OUT
L
/2,