MCP6241T-E/SN Microchip Technology, MCP6241T-E/SN Datasheet - Page 4

• Manufacturer Part Number: MCP6241T-E/SN
• Description: IC OPAMP SNGL 1.8V 650KHZ 8SOIC
• Manufacturer: Microchip Technology

Specifications of MCP6241T-E/SN

• Amplifier Type: General Purpose
• Number Of Circuits: 1
• Output Type: Rail-to-Rail
• Slew Rate: 0.3 V/µs
• Gain Bandwidth Product: 550kHz
• Current - Input Bias: 1pA
• Voltage - Input Offset: 5000µV
• Current - Supply: 50µA
• Current - Output / Channel: 23mA
• Voltage - Supply, Single/dual (±): 1.8 V ~ 5.5 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Number Of Channels: 1
• Voltage Gain Db: 110 dB
• Common Mode Rejection Ratio (min): 60 dB
• Input Offset Voltage: 5 mV
• Operating Supply Voltage: 3 V, 5 V
• Supply Current: 0.07 mA
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• -3db Bandwidth: -
• Lead Free Status / Rohs Status: Details

MCP6241/1R/1U/2/4
AC ELECTRICAL CHARACTERISTICS
TEMPERATURE CHARACTERISTICS
1.1
The test circuits used for the DC and AC tests are
shown in
capacitors are laid out according to the rules discussed
in Section 4.6 “PCB Surface Leakage”.
FIGURE 1-1:
Most Non-Inverting Gain Conditions.
DS21882D-page 4
Electrical Characteristics: Unless otherwise indicated, T
V
AC Response
Gain Bandwidth Product
Phase Margin
Slew Rate
Noise
Input Noise Voltage
Input Noise Voltage Density
Input Noise Current Density
Electrical Characteristics: Unless otherwise indicated, V
Temperature Ranges
Extended Temperature Range
Operating Temperature Range
Storage Temperature Range
Thermal Package Resistances
Thermal Resistance, 5L-SC70
Thermal Resistance, 5L-SOT-23
Thermal Resistance, 8L-DFN (2x3)
Thermal Resistance, 8L-MSOP
Thermal Resistance, 8L-PDIP
Thermal Resistance, 8L-SOIC
Thermal Resistance, 14L-PDIP
Thermal Resistance, 14L-SOIC
Thermal Resistance, 14L-TSSOP
V
OUT
Note:
V
DD
IN
/2
≈ V
Test Circuits
R
R
DD
N
G
Figure 1-1
The internal Junction Temperature (T
/2, R
Parameters
Parameters
MCP624X
L
= 10 kΩ to V
V
AC and DC Test Circuit for
DD
and
0.1 µF
R
Figure
F
DD
/2 and C
1 µF
1-2. The bypass
C
L
L
V
= 60 pF.
GBWP
Sym
θ
θ
θ
θ
θ
θ
θ
θ
θ
L
Sym
T
T
T
PM
SR
E
JA
JA
JA
JA
JA
JA
JA
JA
JA
e
V
R
i
A
A
A
ni
ni
ni
OUT
J
L
) must not exceed the Absolute Maximum specification of +150°C.
Min
Min
-40
-40
-65
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
A
DD
= +25°C, V
= +1.8V to +5.5V and V
FIGURE 1-2:
Most Inverting Gain Conditions.
V
0.30
Typ
550
0.6
84.5
V
68
10
45
DD
Typ
331
256
206
163
120
100
85
70
—
—
—
IN
/2
DD
R
R
N
G
= +1.8 to 5.5V, V
Max
—
—
—
—
—
—
+125
+125
+150
Max
—
—
—
—
—
—
—
—
—
MCP624X
nV/√Hz
fA/√Hz
V
µV
Units
SS
V/µs
AC and DC Test Circuit for
kHz
DD
Units
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
© 2008 Microchip Technology Inc.
°
P-P
°C
°C
°C
= GND.
0.1 µF
SS
R
F
G = +1 V/V
f = 0.1 Hz to 10 Hz
f = 1 kHz
f = 1 kHz
= GND, V
(Note)
1 µF
Conditions
Conditions
C
CM
L
= V
V
L
V
R
DD
OUT
L
/2,