LT1168ACN8 Linear Technology, LT1168ACN8 Datasheet - Page 6

• Manufacturer Part Number: LT1168ACN8
• Description: IC PREC INSTRMNT-AMP PROG 8-DIP
• Manufacturer: Linear Technology

Specifications of LT1168ACN8

• Amplifier Type: Instrumentation
• Number Of Circuits: 1
• Slew Rate: 0.5 V/µs
• Gain Bandwidth Product: 400kHz
• Current - Input Bias: 40pA
• Voltage - Input Offset: 15µV
• Current - Supply: 350µA
• Current - Output / Channel: 32mA
• Voltage - Supply, Single/dual (±): 4.6 V ~ 36 V, ±2.3 V ~ 18 V
• Operating Temperature: 0°C ~ 70°C
• Mounting Type: Through Hole
• Package / Case: 8-DIP (0.300", 7.62mm)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Output Type: -
• -3db Bandwidth: -
• Other names: Q1158171A

LT1167
elecTrical characTerisTics
temperature range, otherwise specifications are at T
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: Does not include the effect of the external gain resistor RG.
Note 3: This parameter is not 100% tested.
Note 4: The LT1167AC/LT1167C/LT1167AC-1/LT1167C-1 are designed,
characterized and expected to meet the industrial temperature limits, but
are not tested at –40°C and 85°C. I-grade parts are guaranteed.
Note 5: This parameter is measured in a high speed automatic tester that
does not measure the thermal effects with longer time constants. The
magnitude of these thermal effects are dependent on the package used,
heat sinking and air flow conditions.
SYMBOL PARAMETER
PSRR
I
V
I
SR
V
6
S
OUT
OUT
REF
Power Supply Rejection Ratio
Supply Current
Output Voltage Swing
Output Current
Slew Rate
REF Voltage Range
CONDITIONS (NOTE 7)
V
V
V
G = 1, V
(Note 3)
S
S
S
G = 1
G = 10
G = 100
G = 1000
= ±2.3V to ±18V
= ±2.3V to ±5V
= ±5V to ±18V
OUT
= ±10V
A
= 25°C. V
The
l
S
denotes the specifications which apply over the full operating
= ±15V, V
l
l
l
l
l
l
l
l
l
l
Note 6: Hysteresis in offset voltage is created by package stress that
differs depending on whether the IC was previously at a higher or lower
temperature. Offset voltage hysteresis is always measured at 25°C, but
the IC is cycled to 85°C I-grade (or 70°C C-grade) or –40°C I-grade
(0°C C-grade) before successive measurement. 60% of the parts will
pass the typical limit on the data sheet.
Note 7: Typical parameters are defined as the 60% of the yield parameter
distribution.
Note 8: Referred to input.
–V
–V
–V
0.55
MIN
100
120
125
128
S
S
S
15
+1.4
+1.6
+1.6
LT1167AI/LT1167AI-1
CM
= 0V, 0°C ≤ T
0.95
TYP
112
125
132
140
1.1
20
+V
+V
+V
A
MAX
≤ 70°C, R
1.6
S
S
S
–1.3
–1.5
–1.6 –V
–V
–V
MIN
0.55
115
120
125
L
S
S
S
95
15
+1.4
+1.6
+1.6
= 2k, unless otherwise noted.
LT1167I/LT1167I-1
0.95
TYP
112
125
132
140
1.1
20
+V
+V
+V
MAX
1.6
S
S
S
–1.3
–1.5
–1.6
UNITS
1167fb
V/µs
mA
mA
dB
dB
dB
dB
V
V
V