AD629BNZ Analog Devices Inc, AD629BNZ Datasheet - Page 4

• Manufacturer Part Number: AD629BNZ
• Description: IC AMP DIFF 25MA LDRIFT 8DIP
• Manufacturer: Analog Devices Inc

Specifications of AD629BNZ

• Design Resources: Measuring -48 V High-Side Current Using AD629, AD8603, AD780, and AD7453 (CN0100)
• Amplifier Type: Differential
• Number Of Circuits: 1
• Slew Rate: 2.1 V/µs
• -3db Bandwidth: 500kHz
• Voltage - Input Offset: 100µV
• Current - Supply: 900µA
• Current - Output / Channel: 25mA
• Voltage - Supply, Single/dual (±): 5 V ~ 36 V, ±2.5 V ~ 18 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Through Hole
• Package / Case: 8-DIP (0.300", 7.62mm)
• No. Of Amplifiers: 1
• Input Offset Voltage: 500µV
• Gain Db Max: 1dB
• Bandwidth: 500kHz
• Supply Voltage Range: ± 2.5V To ± 18V
• Supply Current: 900µA
• Amplifier Case Style: DIP
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Output Type: -
• Gain Bandwidth Product: -
• Current - Input Bias: -

AD629
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter
Supply Voltage, V
Internal Power Dissipation
Input Voltage Range, Continuous
Common-Mode and Differential, 10 sec
Output Short-Circuit Duration
Pin 1 and Pin 5
Maximum Junction Temperature
Operating Temperature Range
Storage Temperature Range
Lead Temperature (Soldering 60 sec)
1
Specification is for device in free air:
8-Lead PDIP, θ
8-Lead SOIC, θ
8-Lead PDIP (N)
8-Lead SOIC (R)
JA
JA
= 100°C/W;
= 155°C/W.
S
1
Rating
±18 V
See Figure 4
See Figure 4
±300 V
±500 V
Indefinite
–V
150°C
−55°C to +125°C
−65°C to +150°C
300°C
S
− 0.3 V to +V
S
+ 0.3 V
Rev. B | Page 4 of 16
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
ESD CAUTION
Figure 4. Maximum Power Dissipation vs. Temperature for SOIC and PDIP
2.0
1.5
1.0
0.5
0
–50 –40 –30 –20 –10
AMBIENT TEMPERATURE (°C)
8-LEAD PDIP
8-LEAD SOIC
0
10
20
30
40
50
60
T
J
= 150°C
70
80
90