LF355N National Semiconductor, LF355N Datasheet - Page 17

• Manufacturer Part Number: LF355N
• Description: IC OP AMP JFET INPUT 8-DIP
• Manufacturer: National Semiconductor
• Series: BI-FET™r

Specifications of LF355N

• Amplifier Type: J-FET
• Number Of Circuits: 1
• Slew Rate: 5 V/µs
• Gain Bandwidth Product: 2.5MHz
• Current - Input Bias: 30pA
• Voltage - Input Offset: 3000µV
• Current - Supply: 2mA
• Voltage - Supply, Single/dual (±): 10 V ~ 36 V, ±5 V ~ 18 V
• Operating Temperature: 0°C ~ 70°C
• Mounting Type: Through Hole
• Package / Case: 8-DIP (0.300", 7.62mm)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Output Type: -
• Current - Output / Channel: -
• -3db Bandwidth: -
• Other names: *LF355N; LF355

Typical Applications
(Continued)
Low Drift Peak Detector
00564623
• By adding D1 and R
, V
=0 during hold mode. Leakage of D2 provided by feedback path through R
.
f
D1
f
• Leakage of circuit is essentially I
(LF155, LF156) plus capacitor leakage of Cp.
b
• Diode D3 clamps V
(A1) to V
−V
to improve speed and to limit reverse bias of D2.
OUT
IN
D3
<<
• Maximum input frequency should be
⁄
R
C
where C
is the shunt capacitance of D2.
1
2
f
D2
D2
Non-Inverting Unity Gain Operation for LF157
00564675
Inverting Unity Gain for LF157
00564625
17
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