MC79M05BDT ON Semiconductor, MC79M05BDT Datasheet - Page 3

• Manufacturer Part Number: MC79M05BDT
• Description: IC REG VOLT NEG 500MA 5V DPAK
• Manufacturer: ON Semiconductor

Specifications of MC79M05BDT

• Regulator Topology: Negative Fixed
• Voltage - Output: -5V
• Voltage - Input: Down to -35V
• Voltage - Dropout (typical): 1.1V @ 500mA
• Number Of Regulators: 1
• Current - Output: 500mA
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: TO-252-2, DPak (2 Leads + Tab), TO-252AA, SC-63
• Polarity: Negative
• Number Of Outputs: 1
• Output Type: Fixed
• Output Voltage: - 5 V
• Output Current: 0.5 A
• Line Regulation: 50 mV
• Load Regulation: 100 mV
• Input Voltage Max: - 35 V
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Voltage Regulation Accuracy: 4 %
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current - Limit (min): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MC79M05BDTOS

MC79M08B, C
ELECTRICAL CHARACTERISTICS
3. Load and line regulation are specified at constant temperature. Change in V
4. B = T
MC79M12B, C
ELECTRICAL CHARACTERISTICS
5. Load and line regulation are specified at constant temperature. Change in V
6. B = T
Output Voltage (T
Line Regulation, T
Load Regulation, T
Output Voltage
Input Bias Current (T
Input Bias Current Change
Output Noise Voltage, T
Ripple Rejection (f = 120 Hz)
Dropout Voltage
Average Temperature Coefficient of Output Voltage
Output Voltage (T
Line Regulation, T
Load Regulation, T
Output Voltage
Input Bias Current (T
Input Bias Current Change
Output Noise Voltage, T
Ripple Rejection (f = 120 Hz)
Dropout Voltage
Average Temperature Coefficient of Output Voltage
Pulse testing with low duty cycle is used.
C = T
Pulse testing with low duty cycle is used.
C = T
low
low
low
low
−10.5 Vdc ≥ V
−11 Vdc ≥ V
5.0 mA ≤ I
−10.5 Vdc ≥ V
−10.5 Vdc ≥ V
5.0 mA ≤ I
I
I
−14.5 Vdc ≥ V
−15 Vdc ≥ V
5.0 mA ≤ I
−14.5 Vdc ≥ V
−14.5 Vdc ≥ V
5.0 mA ≤ I
I
I
O
O
O
O
to T
to T
to T
to T
= 500 mA, T
= 5.0 mA, 0°C ≤ T
= 500 mA, T
= 5.0 mA, 0°C ≤ T
high
high
high
high
J
J
J
J
J
J
= 25°C)
= 25°C)
, −40°C < T
, −40°C < T
, 0°C < T
, 0°C < T
= 25°C (Note 3)
= 25°C (Note 5)
O
O
O
O
= 25°C (Note 3)
= 25°C (Note 5)
J
J
I
≤ 500 mA
= 25°C)
≤ 350 mA, V
I
≤ 500 mA
= 25°C)
≤ 350 mA, V
≥ −21 Vdc
≥ −25 Vdc
A
A
I
I
I
I
I
I
J
J
≥ −25 Vdc
≥ −25 Vdc, 5.0 mA ≤ I
≥ −25 Vdc, I
≥ −30 Vdc
≥ −30 Vdc, 5.0 mA ≤ I
≥ −30 Vdc, I
= 25°C, 10 Hz ≤ f ≤ 100 kHz
= 25°C, 10 Hz ≤ f ≤ 100 kHz
= 25°C
= 25°C
J
J
< 125°C
< 125°C
J
J
J
J
< 125°C
< 125°C
≤ 125°C
≤ 125°C
Characteristic
Characteristic
I
I
= −10 V
= −19 V
O
O
= 350 mA
= 350 mA
(V
(V
I
I
= −10 V, I
= −19 V, I
O
O
≤ 350 mA
≤ 350 mA
O
O
= 350 mA, T
= 350 mA, T
http://onsemi.com
3
low
low
to T
to T
high
O
high
O
due to heating effects must be taken into account separately.
due to heating effects must be taken into account separately.
(Note 4), unless otherwise noted.)
(Note 6), unless otherwise noted.)
Symbol
DV
Symbol
DV
Reg
Reg
Reg
Reg
V
V
DI
DI
RR
RR
V
V
I
V
V
I
I
V
I
V
−V
O
−V
O
IB
IB
O
O
O
O
load
IB
n
load
IB
n
/DT
/DT
line
line
O
O
−11.5
−11.4
−7.7
−7.6
Min
Min
54
54
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−8.0
−8.0
−0.8
Typ
Typ
−12
5.0
3.0
1.1
0.4
5.0
3.0
4.4
1.1
30
60
63
30
75
60
−
−
−
−
−
−
−12.5
−12.6
Max
−8.3
−8.4
Max
100
240
8.0
0.4
0.4
8.0
0.4
0.4
80
50
80
50
−
−
−
−
−
−
−
−
mV/°C
mV/°C
Unit
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
mV
mV
mA
mA
mV
mV
mA
mA
dB
dB
mV
mV