NUP4302MR6T1G ON Semiconductor, NUP4302MR6T1G Datasheet - Page 2

• Manufacturer Part Number: NUP4302MR6T1G
• Description: IC DIODE ARRAY SCHOTTKY TSOP6
• Manufacturer: ON Semiconductor

Specifications of NUP4302MR6T1G

• Voltage - Reverse Standoff (typ): 25V
• Voltage - Breakdown: 30V
• Power (watts): 225mW
• Polarization: 4 Channel Array - Bidirectional
• Mounting Type: Surface Mount
• Package / Case: SC-74-6
• Applications: General Purpose
• Number Of Circuits: 4
• Voltage - Working: 30V
• Technology: Diode Array
• Product: Schottky Diodes
• Peak Reverse Voltage: 30 V
• Forward Continuous Current: 200 mA
• Configuration: Octal
• Recovery Time: 5 ns
• Forward Voltage Drop: 1 V
• Maximum Reverse Leakage Current: 30 uA
• Maximum Power Dissipation: 225 mW
• Operating Temperature Range: - 55 C to + 125 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Voltage - Clamping: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: NUP4302MR6T1G; NUP4302MR6T1GOSTR

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
Peak Reverse Breakdown Voltage
Forward Power Dissipation (T
Forward Continuous Current
Junction Operating Temperature
Storage Temperature Range
Reverse Breakdown Voltage
Reverse Leakage
Forward Voltage
Forward Voltage
Forward Voltage
Forward Voltage
Total Capacitance
Reverse Recovery Time
+10 V
50 W OUTPUT
GENERATOR
PULSE
Parameter
820 W
0.1 mF
100 mH
2 k
(T
J
= 25°C unless otherwise noted)
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (I
Notes:
Notes:
A
Rating
= 25°C)
Symbol
I
F
V
V
V
V
V
C
I
t
BR
R
2. Input pulse is adjusted so I
3. t
rr
F
F
F
F
T
DUT
p
(T
» t
J
Figure 1. Recovery Time Equivalent Test Circuit
I
V
I
I
I
I
V
V
I
rr
= 25°C unless otherwise noted)
R
F
F
F
F
F
R
R
R
= 0.1 mAdc
= 1.0 mAdc
= 10 mAdc
= 100 mAdc
= I
= 100 mA
= 25 V
= 0 V, f = 1.0 MHz, I/O to Ground
= 0 V, f = 1.0 MHz, I/O to I/O
OSCILLOSCOPE
R
0.1 mF
= 10 mA, I
50 W INPUT
SAMPLING
http://onsemi.com
Conditions
R(REC)
R(peak)
2
= 1.0 mA (Figure 1)
V
R
is equal to 10 mA.
t
INPUT SIGNAL
r
Symbol
10%
V
T
90%
P
T
I
stg
BR
F
F
J
t
p
t
Min
30
−55 to +125
−55 to +150
F
) of 10 mA.
Value
I
I
R
F
225
200
30
(I
Typ
F
= I
at i
OUTPUT PULSE
R
= 10 mA; measured
R(REC)
t
rr
i
R(REC)
Max
0.28
0.35
0.45
1.00
= 1 mA)
5.0
30
28
18
Unit
mW
mA
°C
°C
V
= 1 mA
t
Unit
mA
pF
ns
V
V
V
V
V