MC3423P1 ON Semiconductor, MC3423P1 Datasheet - Page 5
![no-image](/images/manufacturer_photos/0/4/495/on_semiconductor_sml.jpg)
MC3423P1
Manufacturer Part Number
MC3423P1
Description
IC SENSOR UNDERVOLTAGE 8DIP
Manufacturer
ON Semiconductor
Series
MC3423r
Datasheet
1.MC3423P1.pdf
(10 pages)
Specifications of MC3423P1
Technology
Mixed Technology
Number Of Circuits
2
Applications
General Purpose
Package / Case
8-DIP (0.300", 7.62mm)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Power (watts)
-
Voltage - Working
-
Voltage - Clamping
-
Other names
MC3423P1OS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MC3423P1
Manufacturer:
MOTOROLA/摩托罗拉
Quantity:
20 000
Company:
Part Number:
MC3423P1G
Manufacturer:
RENESAS
Quantity:
201
leads tied together (i.e., both are positive supplies). If
their positive leads are common (two negative supplies)
the emitter of Q1 would be moved to the positive lead of
supply 1 and R1 would therefore have to be resized to
deliver the appropriate drive to Q1.
Crowbar SCR Considerations
SCR, when activated, is subject to a large current surge
from the output capacitance, C
consists of the power supply output caps, the load’s
decoupling caps, and in the case of Figure 11A, the supply’s
input filter caps. This surge current is illustrated in Figure
12, and can cause SCR failure or degradation by any one
of three mechanisms: di/dt, absolute peak surge, or I
interrelationship of these failure methods and the breadth
of the applications make specification of the SCR by the
semiconductor manufacturer difficult and expensive.
Therefore, the designer must empirically determine the
SCR and circuit elements which result in reliable and
effective OVP operation. However, an understanding of the
factors which influence the SCR’s di/dt and surge
capabilities simplifies this task.
di/dt
conduction takes a finite amount of time to grow, starting
as a very small region and gradually spreading. Since the
anode current flows through this turned−on gate region,
very high current densities can occur in the gate region if
high anode currents appear quickly (di/dt). This can result
in immediate destruction of the SCR or gradual
degradation of its forward blocking voltage capabilities −
depending on the severity of the occasion.
Note that both supplies have their negative output
Referring to Figure 11, it can be seen that the crowbar
As the gate region of the SCR is driven on, its area of
Supply
Supply
Power
Power
#1
#2
Activating One MC3423 from Another
Figure 8. Circuit Configuration for
7
1
1
7
6
5
R1
out
. This capacitance
10k
Q1
1.0k
2
http://onsemi.com
t. The
+
−
+
−
MC3423
5
0.0001
0.001
0.01
30
20
10
35
30
25
20
15
10
1.0
0.1
0
0.001
0
0
1
Figure 10. Minimum R
2 3 5 7 1
10
R2 = 2.7 k
5.0
RG, GATE CURRENT LIMITING RESISTOR (W)
R
if V
Figure 9. R1 versus Trip Voltage
G(min)
Minimum Overvoltage Duration
CC
Figure 11. Capacitance versus
0.01
20
< 11 V
= 0
10
V
T
t
30
d
, TRIP VOLTAGE (V)
, DELAY TIME (ms)
15
0.1
40
G
versus Supply Voltage
Max
50
20
1.0
60
25
Min
70
Typ
10
30
80
1
5
2
1