TB3100L-13 Diodes Zetex, TB3100L-13 Datasheet - Page 2
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TB3100L-13
Manufacturer Part Number
TB3100L-13
Description
THYRISTOR PROTECT BI-DIR 30A SMB
Manufacturer
Diodes Zetex
Datasheet
1.TB0900L-13-F.pdf
(5 pages)
Specifications of TB3100L-13
Voltage - Breakover
350V
Voltage - Off State
275V
Voltage - On State
3.5V
Current - Peak Pulse (8 X 20µs)
150A
Current - Peak Pulse (10 X 1000µs)
30A
Current - Hold (ih)
150mA
Number Of Elements
1
Capacitance
40pF
Package / Case
DO-214AA, SMB
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
TB3100LDITR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
TB3100L-13-F
Manufacturer:
DIODES
Quantity:
45 000
Electrical Characteristics
Notes:
TB0640L - TB3500L
Document number: DS30359 Rev. 8 - 2
Part Number
TB0640L
TB0720L
TB0900L
TB1100L
TB1300L
TB1500L
TB1800L
TB2300L
TB2600L
TB3100L
TB3500L
1. EU Directive 2002/95/EC (RoHS). All applicable RoHS exemptions applied. Please visit our website at http://www.diodes.com/quality/lead_free.html.
2. Product manufactured with Data Code 0924 (week 24, 2009) and newer are built with Green Molding Compound.
3. I
4. Off-state capacitance measured at f = 1.0MHz, 1.0V
exceed 30ms.
H
> (V
L
/R
Repetitive
Maximum
Off-State
V
Voltage
L
) If this criterion is not obeyed, the TSPD triggers but does not return correctly to high-resistance state. The surge recovery time does not
Rated
DRM
120
140
160
190
220
275
320
58
65
75
90
(V)
Symbol
V
I
V
V
Current @
DRM
I
Maximum
I
I
C
DRM
V
Off-State
I
BR
BO
I
PP
Leakage
BO
BR
H
DRM
T
O
V
DRM
5
5
5
5
5
5
5
5
5
5
5
(uA)
@T
A
= 25°C unless otherwise specified
Breakover
Maximum
Voltage
V
BO
130
160
180
220
265
300
350
400
77
88
98
(V)
RMS
signal, V
I
BR
Maximum
www.diodes.com
@ I
On-State
Voltage
V
I
DRM
T
T
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
I
I
I
BO
PP
H
R
= 1A
(V)
= 2V
2 of 5
I
V
Stand-off Voltage
Leakage current at stand-off voltage
Breakdown voltage
Breakdown current
Breakover voltage
Breakover current
Holding current
On state voltage
Peak pulse current
Off-state capacitance
T
DC
bias.
Breakover Current
(mA)
Min
50
50
50
50
50
50
50
50
50
50
50
V
I
BO
DRM
(mA)
Max
800
800
800
800
800
800
800
800
800
800
800
V
BR
V
BO
V
Holding Current
(mA)
Min
150
150
150
150
150
150
150
150
150
150
150
Note 3
Note 4
Parameter
I
H
(mA)
Max
800
800
800
800
800
800
800
800
800
800
800
TB0640L - TB3500L
Capacitance
Off-State
Typical
C
O
100
100
100
60
60
60
60
40
40
40
40
(pF)
© Diodes Incorporated
September 2010
Marking
T064L
T072L
T090L
T110L
T130L
T150L
T180L
T230L
T260L
T310L
T350L
Code