TISP3240F3SL Bourns Inc., TISP3240F3SL Datasheet
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TISP3240F3SL
Specifications of TISP3240F3SL
Related parts for TISP3240F3SL
TISP3240F3SL Summary of contents
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Ion-Implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge V V DRM (BO) DEVICE V V ‘3240F3 180 240 ‘3260F3 200 260 ‘3290F3 220 290 ‘3320F3 240 320 ‘3380F3 270 380 Planar Passivated Junctions Low Off-State Current ...
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TISP3xxxF3 (HV) Overvoltage Protector Series Description (continued) These monolithic protection devices are fabricated in ion implanted planar structures to ensure precise and matched breakover control and are virtually transparent to the system in normal operation. Absolute Maximum Ratings ...
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TISP3xxxF3 (HV) Overvoltage Protector Series Electrical Characteristics for T and and G Terminals °C (Unless Otherwise Noted) Parameter Repetitive peak off- = ± DRM D state current dv/dt = ±250 V/ms, ...
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TISP3xxxF3 (HV) Overvoltage Protector Series Parameter Measurement Information V (BR)M V DRM - (BR) DRM V (BR) I (BO) V (BO) Quadrant III Switching Characteristic Figure 1. Voltage-Current Characteristics for any Terminal Pair MARCH 1994 - REVISED OCTOBER ...
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TISP3xxxF3 (HV) Overvoltage Protector Series Typical Characteristics - R and and G Terminals OFF-STATE CURRENT vs JUNCTION TEMPERATURE 100 0·1 0·01 0·001 - Junction Temperature - ...
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TISP3xxxF3 (HV) Overvoltage Protector Series Typical Characteristics - R and and G Terminals HOLDING CURRENT & BREAKDOWN CURRENT vs JUNCTION TEMPERATURE 1.0 0.9 0.8 0.7 0.6 0.5 I (BO) 0.4 0 0.2 0.1 -25 0 ...
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TISP3xxxF3 (HV) Overvoltage Protector Series Typical Characteristics - R and and G Terminals 1000 100 10 76 SURGE CURRENT vs DECAY TIME 2 10 100 Decay Time - µs Figure 10. TC3HAA 1000 MARCH 1994 - REVISED ...
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TISP3xxxF3 (HV) Overvoltage Protector Series Typical Characteristics - R and T Terminals OFF-STATE CURRENT vs JUNCTION TEMPERATURE 100 = ± 0·1 0·01 0·001 - Junction Temperature - ° Figure ...
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TISP3xxxF3 (HV) Overvoltage Protector Series Thermal Information MAXIMUM NON-RECURRING 50 Hz CURRENT vs CURRENT DURATION Package P Package D Package Current Duration - s Figure 15. 78 TI3HAA V ...
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TISP3xxxF3 (HV) Overvoltage Protector Series Electrical Characteristics ® The electrical characteristics of a TISP device are strongly dependent on junction temperature Hence, a characteristic value will depend on the junction temperature at the instant of measurement. The ...
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TISP3xxxF3 (HV) Overvoltage Protector Series Protection Voltage The protection voltage, (V (BO) ), increases under lightning surge conditions due to thyristor regeneration. This increase is dependent on the ® rate of current rise, di/dt, when the TISP device is clamping ...
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TISP3xxxF3 (HV) Overvoltage Protector Series Longitudinal Balance ® Figure 18 shows a three terminal TISP device with its equivalent “delta” capacitance. Each capacitance and the true terminal pair capacitance measured with ...
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TISP3xxxF3 (HV) Overvoltage Protector Series D008 Plastic Small-outline Package This small-outline package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics ...
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TISP3xxxF3 (HV) Overvoltage Protector Series D008 Tape DImensions D008 Package (8-pin Small Outline) Single-Sprocket Tape 7.90 - 8.10 (.311 - .319) 6.30 - 6.50 (.248 - .256) Carrier Tape Embossment METRIC DIMENSIONS ARE: (INCHES) NOTES: A. Taped devices are supplied ...
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TISP3xxxF3 (HV) Overvoltage Protector Series D008 Plastic Dual-in-Line Package This dual-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics ...
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TISP3xxxF3 (HV) Overvoltage Protector Series SL003 3-pin Plastic Single-In-Line Package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance ...