MMT08B350T3G ON Semiconductor, MMT08B350T3G Datasheet - Page 3

• Manufacturer Part Number: MMT08B350T3G
• Description: TSPD BIDIRECT 350V 80A SMB
• Manufacturer: ON Semiconductor

Specifications of MMT08B350T3G

• Voltage - Breakover: 400V
• Voltage - Off State: 300V
• Voltage - On State: 3V
• Current - Peak Pulse (8 X 20µs): 250A
• Current - Peak Pulse (10 X 1000µs): 80A
• Current - Hold (ih): 150mA
• Number Of Elements: 1
• Capacitance: 45pF
• Package / Case: DO-214AA, SMB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.001
0.01
100
440
430
420
410
400
390
380
1.0
0.1
100
10
50
−60
−60
0
0
Figure 5. Exponential Decay Pulse Waveform
Figure 3. Maximum Breakover Voltage versus
t
r
V
−40
−40
Figure 1. Typical Off−State Current versus
D1
Peak
Value
= 50V
−20
−20
t
0
0
f
TEMPERATURE (°C)
TEMPERATURE (°C)
t
t
Temperature
r
f
Temperature
= rise time to peak value
= decay time to half value
20
20
Half Value
TIME (ms)
40
40
60
60
80
80
100
100
http://onsemi.com
120
MMT08B350T3
120
140
140
3
400
280
260
240
220
420
380
360
340
320
300
400
390
380
370
360
350
340
330
320
600
550
500
450
400
350
300
250
200
150
100
−60
10
−40
Figure 6. Peak Surge On−State Current versus
Surge Current Duration, Sinusoidal Waveform
−40
Figure 2. Typical Breakdown Voltage versus
−20
Figure 4. Typical Holding Current versus
−20
0
100
0
TEMPERATURE (°C)
TEMPERATURE (°C)
20
Temperature
20
TIME (sec)
Temperature
40
40
60
60
1000
80
80
100
100
120
120
100000
140