NP0640SAT3G ON Semiconductor, NP0640SAT3G Datasheet - Page 3

• Manufacturer Part Number: NP0640SAT3G
• Description: IC THY SURGE PROTECTOR 64V SMB
• Manufacturer: ON Semiconductor
• Series: NPr

Specifications of NP0640SAT3G

• Voltage - Breakover: 77V
• Voltage - Off State: 58V
• Voltage - On State: 4V
• Current - Peak Pulse (10 X 1000µs): 50A
• Current - Hold (ih): 150mA
• Number Of Elements: 1
• Capacitance: 84pF
• Package / Case: DO-214AA, SMB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Peak Pulse (8 X 20µs): -
• Other names: NPO640SAT3G

THERMAL CHARACTERISTICS
V
V
I
I
V
I
SURGE RATINGS
5. Allow cooling before testing second polarity.
6. Measured under pulse conditions to reduce heating.
7. Nominal values may not represent the maximum capability of a device.
(BO)
H
T
Nominal Pulse
Symbol
100
DRM
(BO)
T
T
50
R
Symbol
0
STG
T
0JA
J
0
Surge Short Circuit Current Non – Repetitive
Double Exponential Decay Waveform (Notes 5, 6 and 7)
t
r
Figure 1. Exponential Decay Pulse Waveform
Storage Temperature Range
Operating Temperature Range
Thermal Resistance: Junction−to−Ambient Per EIA/JESD51−3, PCB = FR4 3”x4.5”x0.06”
Fan out in a 3x3 inch pattern, 2 oz copper track.
Peak
Value
Peak Off State Voltage
Breakover Voltage
Breakover Current
Holding Current
On State Voltage
On State Current
t
f
t
t
r
f
= decay time to half value
= rise time to peak value
Half Value
TIME (ms)
Characteristics
Parameter
Rating
10 x 1000 mSec
http://onsemi.com
10 x 160 mSec
10 x 360 mSec
10 x 560 mSec
10 x 700 mSec
2 x 10 mSec
3
Figure 2. Voltage Current Characteristics of TSPD
−Voltage
Symbol
I
I
I
I
I
I
PPS1
PPS3
PPS4
PPS5
PPS6
PPS7
I
(BO)
I
I
H
T
150
90
75
50
75
50
A
+I
−I
V
250
150
125
100
100
80
−65 to +150
−40 to +150
B
T
Value
90
V
DRM
500
200
150
150
200
100
C
V
(BO)
+Voltage
A(pk)
°C/W
Unit
Unit
°C
°C